OptiMOS™ 3 N-Channel MOSFET, 100 A, 100 V, 8-Pin TDSON BSC070N10NS3GATMA1
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- Код товара
- 8022409056
- Артикул
- BSC070N10NS3GATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Width
- 5.35mm
- Brand:
- Infineon Technologies
- Series
- OptiMOS 3
- Series:
- OptiMOS 3
Цена по запросу
(от 230 ₽)
Минимальный заказ: 5000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Infineon предлагает большой и всесторонний ассортимент устройств на МОП-транзистораx, который включает семейства CoolMOS, OptiMOS и StrongIRFET.
Технические параметры
| Width | 5.35mm |
| Brand: | Infineon Technologies |
| Series | OptiMOS 3 |
| Series: | OptiMOS 3 |
| FET Type | N-Channel |
| Pin Count | 8 |
| Vgs (Max) | ±20V |
| Fall Time: | 8 ns |
| Rise Time: | 10 ns |
| Technology | MOSFET(Metal Oxide) |
| Tradename: | OptiMOS |
| Вес, г | 1 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TDSON |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | 8-PowerTDFN |
| Mounting Style: | SMD/SMT |
| Package / Case: | TDSON-8 |
| Part # Aliases: | BSC070N10NS3 G SP000778082 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 42 nC |
| Vgs(th) (Max) @ Id | 3.5V @ 75µA |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Forward Diode Voltage | 1.2V |
| Operating Temperature | -55°C ~ 150°C(TJ) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 50A, 10V |
| Особенности | - |
| Pd - Power Dissipation: | 114 W |
| Power Dissipation (Max) | 114W(Tc) |
| Supplier Device Package | PG-TDSON-8-1 |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 156 W |
| Typical Gate Charge @ Vgs | 63 nC @ 10 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 15 ns |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Maximum Drain Source Voltage | 100 V |
| Typical Turn-Off Delay Time: | 29 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Drain to Source Voltage (Vdss) | 100 V |
| Id - Continuous Drain Current: | 90 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 36 S |
| Maximum Drain Source Resistance | 8.6 mΩ |
| Maximum Continuous Drain Current | 100 A |
| Rds On - Drain-Source Resistance: | 7 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 50 V |
| Vds - Drain-Source Breakdown Voltage: | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 90A(Tc) |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |
| Максимальное напряжение сток-исток Uси,В | 100 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 100 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 114 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |