BSC067N06LS3GATMA1, Транзистор N-МОП, полевой, 60В, 50А, 69Вт, PG-TDSON-8
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070102314
- Артикул
- BSC067N06LS3GATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Width
- 6.35mm
- Brand:
- Infineon Technologies
- Series
- OptiMOS™ 3
- Series:
- OptiMOS 3
Цена по запросу
(от 89 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Продукция OptiMOS™ выпускается в высокопроизводительныx комплектацияx для решения самыx сложныx задач, обеспечивая полную гибкость в условияx ограниченного пространства.
Технические параметры
| Width | 6.35mm |
| Brand: | Infineon Technologies |
| Series | OptiMOS™ 3 |
| Series: | OptiMOS 3 |
| Pin Count | 8 |
| Fall Time: | 7 ns |
| Rise Time: | 26 ns |
| Tradename: | OptiMOS |
| Вес, г | 0.5 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TDSON |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | TDSON-8 |
| Part # Aliases: | BSC067N06LS3 G SP000451084 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 67 nC |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity: | N-Channel |
| Pd - Power Dissipation: | 69 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 69 W |
| Typical Gate Charge @ Vgs | 23 nC @ 4.5 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-On Delay Time: | 15 ns |
| Maximum Drain Source Voltage | 60 V |
| Typical Turn-Off Delay Time: | 37 ns |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Id - Continuous Drain Current: | 50 A |
| Maximum Gate Threshold Voltage | 2.2V |
| Maximum Operating Temperature: | +150 C |
| Minimum Gate Threshold Voltage | 1.2V |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 38 S |
| Maximum Drain Source Resistance | 12.1 mΩ |
| Maximum Continuous Drain Current | 50 A |
| Rds On - Drain-Source Resistance: | 6.7 mOhms |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.2 V |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |