BSC057N03LSGATMA1, Trans MOSFET N-CH 30V 17A 8-Pin TDSON EP T/R
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- Код товара
- 8001293675
- Артикул
- BSC057N03LSGATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- RoHS
- Details
- Brand
- Infineon Technologies
- Width
- 5.15 mm
- Height
- 1.27 mm
Цена по запросу
(от 110 ₽)
Минимальный заказ: 801 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
N-канальный МОП-транзистор, 71 А, 30 В, 8-контактный TDSON Infineon BSC057N03LSGATMA1
Технические параметры
| RoHS | Details |
| Brand | Infineon Technologies |
| Width | 5.15 mm |
| Height | 1.27 mm |
| Length | 5.9 mm |
| Series | BSC057N03 |
| Military | No |
| Fall Time | 3.2 ns |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Rise Time | 3.6 ns |
| Tradename | OptiMOS |
| Automotive | No |
| Technology | Si |
| Вес, г | 1 |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | Infineon |
| Configuration | Single Quad Drain Triple Source |
| Mounting Style | SMD/SMT |
| Package / Case | TDSON-8 |
| Part # Aliases | BSC057N03LS BSC057N03LSGXT G SP000275113 |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 30 nC |
| Supplier Package | TDSON EP |
| Number of Channels | 1 Channel |
| Структура | N-Channel |
| Transistor Polarity | N-Channel |
| Factory Pack Quantity | 5000 |
| Standard Package Name | SON |
| Pd - Power Dissipation | 45 W |
| Особенности | - |
| Vgs - Gate-Source Voltage | 20 V |
| Typical Turn-On Delay Time | 4.7 ns |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 19 ns |
| Id - Continuous Drain Current | 71 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Operating Temperature - (??C) | -55~150 |
| Forward Transconductance - Min | 36 S |
| Maximum Power Dissipation - (mW) | 2500 |
| Rds On - Drain-Source Resistance | 4.8 mOhms |
| Typical Gate Charge @ 10V - (nC) | 22 |
| Typical Gate Charge @ Vgs - (nC) | 11 4.5VI20 10V |
| Maximum Gate Source Voltage - (V) | ??20 |
| Maximum Drain Source Voltage - (V) | 30 |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Maximum Continuous Drain Current - (A) | 17 |
| Typical Input Capacitance @ Vds - (pF) | 1800 15V |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Maximum Drain Source Resistance - (mOhm) | 5.7 10V |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 30 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 17 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±16В |