BSC042NE7NS3GATMA1, Транзистор N-МОП, полевой, 75В, 100А, 125Вт, PG-TDSON-8
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8022464517
- Артикул
- BSC042NE7NS3GATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Q(g)
- 20 nC
- RoHS
- Details
- Brand
- Infineon Technologies
- V(DS)
- 75 V
Цена по запросу
(от 151,78 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
MOSFET, N-канальный, 75 В, 100 А, PG-TDSON- 8, Полярность транзистора: N-канальный, Постоянный ток стока Id:100 А, Напряжение источника стока Vds: 75 В, Сопротивление Rds(включено): 0,0037 Ом, Тестовое напряжение Rds(включено) Vgs:10 В, Пороговое напряжение Vgs:3,1 В, соответствует RoHS: Да
Технические параметры
| Q(g) | 20 nC |
| RoHS | Details |
| Brand | Infineon Technologies |
| V(DS) | 75 V |
| Width | 5.15 mm |
| Brand: | Infineon Technologies |
| Height | 1.27 mm |
| Length | 5.9 mm |
| P(tot) | 125 W |
| Package | TDSON-8 |
| R(thJC) | 1 K/W |
| FET Type | N-Channel |
| Mounting | SMD |
| Fall Time | 9 ns |
| Packaging | Reel |
| Rise Time | 17 ns |
| Tradename | OptiMOS |
| Vgs (Max) | ±20V |
| Automotive | NO |
| Fall Time: | 9 ns |
| Rise Time: | 17 ns |
| Technology | Si |
| Вес, г | 0.5 |
| Logic level | NO |
| RoHS Status | RoHS-conform |
| Technology: | Si |
| Channel Mode | Enhancement |
| Manufacturer | Infineon |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | 1 N-Channel |
| Manufacturer: | Infineon |
| Mounting Type | Surface Mount |
| Package/Case: | TDSON-8 |
| Product Type: | MOSFET |
| RDS(on)at 10V | 4.2 mOhm |
| Configuration: | Single |
| Fast bodydiode | NO |
| Mounting Style | SMD/SMT |
| Package / Case | TDSON-8 |
| Part # Aliases | BSC042NE7NS3 BSC042NE7NS3GXT G SP000657440 |
| I(D)at Tc=25°C | 100 A |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | BSC042NE7NS3 G SP000657440 |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 69 nC |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 69 nC |
| Number of Channels | 1 Channel |
| Vgs(th) (Max) @ Id | 3.8V @ 91µA |
| Структура | N-МОП |
| Number of Channels: | 1 Channel |
| Transistor Polarity | N-Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity | 5000 |
| Operating Temperature | -55°C ~ 150°C(TJ) |
| Factory Pack Quantity: | 5000 |
| Pd - Power Dissipation | 125 W |
| Power Dissipation (Pd) | 2.5W;125W |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 50A, 10V |
| Особенности | - |
| Pd - Power Dissipation: | 125 W |
| Power Dissipation (Max) | 2.5W(Ta), 125W(Tc) |
| Supplier Device Package | PG-TDSON-8-1 |
| Vgs - Gate-Source Voltage | 20 V |
| Total Gate Charge (Qg@Vgs) | 69nC@10V |
| Typical Turn-On Delay Time | 14 ns |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-Off Delay Time | 34 ns |
| Typical Turn-On Delay Time: | 14 ns |
| Gate Charge (Qg) (Max) @ Vgs | 69 nC @ 10 V |
| Input Capacitance (Ciss@Vds) | 4.8nF@37.5V |
| Typical Turn-Off Delay Time: | 34 ns |
| Continuous Drain Current (Id) | 19A;100A |
| Id - Continuous Drain Current | 100 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Drain to Source Voltage (Vdss) | 75 V |
| Forward Transconductance - Min | 44 S |
| Id - Continuous Drain Current: | 100 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 44 S |
| Rds On - Drain-Source Resistance | 3.7 mOhms |
| Rds On - Drain-Source Resistance: | 3.7 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 4800 pF @ 37.5 V |
| Vds - Drain-Source Breakdown Voltage | 75 V |
| Vds - Drain-Source Breakdown Voltage: | 75 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs th - Gate-Source Threshold Voltage | 2.3 V |
| Current - Continuous Drain (Id) @ 25°C | 19A(Ta), 100A(Tc) |
| Vgs th - Gate-Source Threshold Voltage: | 2.3 V |
| Пороговое напряжение на затворе | 3.8V@91uA |
| Максимальное напряжение сток-исток Uси,В | 75 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 100 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 125 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 4.2mΩ@50A, 10V |