BSC037N08NS5ATMA1, Транзистор МОП n-канальный, полевой, 80В, 100А, 114Вт, PG-TDSON-8
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070069148
- Артикул
- BSC037N08NS5ATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- PPAP
- Unknown
- Q(g)
- 46 nC
- SVHC
- Yes
- V(DS)
- 80 V
Цена по запросу
(от 210,33 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Конструкция MOSFET-транзисторов Infineon, также известныx как MOSFET-транзисторы, расшифровывается как "Металлооксидные полупроводниковые полевые транзисторы’.
Технические параметры
| PPAP | Unknown |
| Q(g) | 46 nC |
| SVHC | Yes |
| V(DS) | 80 V |
| P(tot) | 114 W |
| Series | OptiMOSTM5 |
| EU RoHS | Compliant with Exemption |
| Package | SuperSO8 |
| R(thJC) | 0.7 K/W |
| Military | No |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | Yes |
| Lead Shape | No Lead |
| Technology | OptiMos |
| Вес, г | 0.75 |
| Logic level | NO |
| PCB changed | 8 |
| Part Status | Active |
| RoHS Status | RoHS-conform |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | SuperSO8 5x6 |
| Configuration | Single Quad Drain Triple Source |
| Mounting Type | Surface Mount |
| Package Width | 5.9 |
| RDS(on)at 10V | 3.7 mOhm |
| Fast bodydiode | YES |
| Package Length | 5.15 |
| I(D)at Tc=25°C | 100 A |
| EDA / CAD Models | BSC037N08NS5ATMA1 by Ultra Librarian |
| Product Category | Power MOSFET |
| Supplier Package | TDSON EP |
| Maximum IDSS (uA) | 1 |
| Process Technology | OptiMOS 5 |
| Transistor Material | Silicon |
| Standard Package Name | SON |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 7 |
| Typical Rise Time (ns) | 10 |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 80 V |
| Operating Temperature - (??C) | -55~150 |
| Maximum Gate Threshold Voltage | 3.8V |
| Maximum Power Dissipation (mW) | 3000 |
| Typical Gate Charge @ 10V (nC) | 46 |
| Typical Gate Charge @ Vgs (nC) | 46@10V |
| Maximum Drain Source Resistance | 0.0037 Ω |
| Maximum Gate Source Voltage (V) | 20 |
| Typical Turn-On Delay Time (ns) | 14 |
| Maximum Continuous Drain Current | 131 A |
| Maximum Drain Source Voltage (V) | 80 |
| Maximum Power Dissipation - (mW) | 2500 |
| Typical Gate Charge @ 10V - (nC) | 46 |
| Typical Gate Charge @ Vgs - (nC) | 46@10V |
| Typical Turn-Off Delay Time (ns) | 26 |
| Maximum Gate Source Voltage - (V) | 20 |
| Maximum Drain Source Voltage - (V) | 80 |
| Maximum Gate Threshold Voltage (V) | 3.8 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 22 |
| Maximum Gate Threshold Voltage - (V) | 3.8 |
| Typical Input Capacitance @ Vds (pF) | 3200@40V |
| Maximum Continuous Drain Current - (A) | 100 |
| Maximum Drain Source Resistance (MOhm) | 3.7@10V |
| Typical Input Capacitance @ Vds - (pF) | 3200@40V |
| Maximum Drain Source Resistance - (mOhm) | 3.7@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |