BSC034N06NS, DFN-8(5.1x5.9) MOSFETs
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8017631851
- Артикул
- BSC034N06NS
- Бренд
- INFINEON TECHNOLOGIES AG.
- RoHS
- Details
- Brand
- Infineon Technologies
- Width
- 5.15 mm
- Brand:
- Infineon Technologies
Цена по запросу
(от 198,16 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
МОП-транзисторы DFN-8(5.1x5.9)
Технические параметры
| RoHS | Details |
| Brand | Infineon Technologies |
| Width | 5.15 mm |
| Brand: | Infineon Technologies |
| Height | 1.27 mm |
| Length | 5.9 mm |
| Series | BSC034N06 |
| Fall Time | 5 ns |
| Packaging | Reel |
| Rise Time | 5 ns |
| Fall Time: | 5 ns |
| Rise Time: | 5 ns |
| Technology | Si |
| Вес, г | 0.19 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Manufacturer | Infineon |
| Subcategory: | Transistors |
| Channel Mode: | Enhancement |
| Configuration | 1 N-Channel |
| Manufacturer: | Infineon |
| Package/Case: | TDSON-8 |
| Product Type: | MOSFETs |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | TDSON-8 |
| Part # Aliases | BSC034N06NSATMA1 SP001067010 |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | SP001067010 BSC034N06NSATMA1 |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 41 nC |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFETs |
| Qg - Gate Charge: | 33 nC |
| Number of Channels | 1 Channel |
| Структура | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Polarity | N-Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity | 5000 |
| Factory Pack Quantity: | 5000 |
| Pd - Power Dissipation | 74 W |
| Особенности | - |
| Pd - Power Dissipation: | 74 W |
| Vgs - Gate-Source Voltage | 20 V |
| Typical Turn-On Delay Time | 9 ns |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-Off Delay Time | 19 ns |
| Typical Turn-On Delay Time: | 9 ns |
| Typical Turn-Off Delay Time: | 19 ns |
| Id - Continuous Drain Current | 100 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Forward Transconductance - Min | 46 S |
| Id - Continuous Drain Current: | 100 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 46 S |
| Rds On - Drain-Source Resistance | 2.8 mOhms |
| Rds On - Drain-Source Resistance: | 3.4 mOhms |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs th - Gate-Source Threshold Voltage | 2.1 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.1 V |
| Пороговое напряжение на затворе | - |
| Максимальная рассеиваемая мощность Pси макс..Вт | 74 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | - |