BSC028N06NS, 60V 23A 2.8mOhm@10V,50A 2.5W 2.8V@50uA N Channel TDSON-8(6x5) MOSFETs
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8056486078
- Артикул
- BSC028N06NS
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand
- Infineon Technologies
- Type:
- OptiMOS Power Transistor
- Width
- 5.35mm
- Brand:
- Infineon Technologies
Цена по запросу
(от 140 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
MOSFET, N-канальный, 60 В, 100 А, PG-TDSON- 8, Полярность транзистора: N-канальный, Постоянный ток стока Id:100 А, Напряжение источника стока Vds: 60 В, Сопротивление Rds(включено): 0,0025 Ом, Тестовое напряжение Rds(включено) Vgs:10 В, Пороговое напряжение Vgs:2,8 В, соответствует RoHS: Да
Технические параметры
| Brand | Infineon Technologies |
| Type: | OptiMOS Power Transistor |
| Width | 5.35mm |
| Brand: | Infineon Technologies |
| Series | OptiMOS 5 |
| Series: | OptiMOS 5 |
| Product: | OptiMOS Power |
| Fall Time | 8 ns |
| Packaging | Cut Tape or Reel |
| Pin Count | 8 |
| Rise Time | 38 ns |
| Tradename | OptiMOS |
| Fall Time: | 8 ns |
| Rise Time: | 38 ns |
| Technology | Si |
| Tradename: | OptiMOS |
| Вес, г | 0.2 |
| Subcategory | MOSFETs |
| Technology: | Si |
| Channel Mode | Enhancement |
| Channel Type | N |
| Manufacturer | Infineon |
| Package Type | TDSON |
| Product Type | MOSFET |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Infineon |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | PG-TDSON-8 |
| Part # Aliases | BSC028N06NSATMA1 BSC28N6NSXT SP000917416 |
| Mounting Style: | SMD/SMT |
| Package / Case: | TDSON-8 |
| Part # Aliases: | BSC028N06NS SP000917416 |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 37 nC |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 49 nC |
| Number Of Channels | 1 Channel |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Material | Si |
| Transistor Polarity | N-Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity | 5000 |
| Forward Diode Voltage | 1.2V |
| Pd - Power Dissipation | 83 W |
| Особенности | - |
| Pd - Power Dissipation: | 83 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 83 W |
| Typical Gate Charge @ Vgs | 37 nC @ 10 V |
| Vgs - Gate-Source Voltage | 10 V |
| Typical Turn-On Delay Time | 11 ns |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Typical Turn-Off Delay Time | 19 ns |
| Typical Turn-On Delay Time: | 11 ns |
| Maximum Drain Source Voltage | 60 V |
| Typical Turn-Off Delay Time: | 19 ns |
| Id - Continuous Drain Current | 100 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Forward Transconductance - Min | 50 S |
| Id - Continuous Drain Current: | 100 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 50 S |
| Maximum Drain Source Resistance | 4.2 mΩ |
| Maximum Continuous Drain Current | 100 A |
| Rds On - Drain-Source Resistance | 2.8 mOhms |
| Rds On - Drain-Source Resistance: | 2.5 mOhms |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs Th - Gate-Source Threshold Voltage | 2.1 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |
| Пороговое напряжение на затворе | - |
| Максимальное напряжение сток-исток Uси,В | 60 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 23 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 2.5 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |
| Сопротивление канала в открытом состоянии Rси вкл. (Max) при Id, Rds (on) | 2.8мОм |