BSC020N03MSGATMA1, Trans MOSFET N-CH 30V 25A 8-Pin TDSON EP T/R
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- Код товара
- 8001293549
- Артикул
- BSC020N03MSGATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- RoHS
- Details
- Brand
- Infineon Technologies
- Width
- 5.15 mm
- Brand:
- Infineon Technologies
Цена по запросу
(от 120 ₽)
Минимальный заказ: 270 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Одиночный N-канальный 30 В 2,5 Мом с 124 ЧПУ-оптимизатором? Мощный Mosfet - TDSON-8
Технические параметры
| RoHS | Details |
| Brand | Infineon Technologies |
| Width | 5.15 mm |
| Brand: | Infineon Technologies |
| Height | 1.27 mm |
| Length | 5.9 mm |
| Series | BSC020N03 |
| Fall Time | 14 ns |
| Packaging | Reel |
| Rise Time | 14 ns |
| Tradename | OptiMOS |
| Fall Time: | 14 ns |
| Rise Time: | 14 ns |
| Technology | Si |
| Вес, г | 1 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Manufacturer | Infineon |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | 1 N-Channel |
| Manufacturer: | Infineon |
| Package/Case: | TDSON-8 |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | TDSON-8 |
| Part # Aliases | BSC020N03MS BSC020N03MSGXT G SP000311503 |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | BSC020N03MS G SP000311503 |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Qg - Gate Charge | 60 nC |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 60 nC |
| Number of Channels | 1 Channel |
| Структура | N-Channel |
| Number of Channels: | 1 Channel |
| Transistor Polarity | N-Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity | 5000 |
| Factory Pack Quantity: | 5000 |
| Pd - Power Dissipation | 96 W |
| Особенности | - |
| Pd - Power Dissipation: | 96 W |
| Vgs - Gate-Source Voltage | 20 V |
| Typical Turn-On Delay Time | 27 ns |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-Off Delay Time | 36 ns |
| Typical Turn-On Delay Time: | 27 ns |
| Typical Turn-Off Delay Time: | 36 ns |
| Id - Continuous Drain Current | 100 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Forward Transconductance - Min | 60 S |
| Id - Continuous Drain Current: | 100 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 60 S |
| Rds On - Drain-Source Resistance | 1.7 mOhms |
| Rds On - Drain-Source Resistance: | 1.7 mOhms |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Vds - Drain-Source Breakdown Voltage: | 30 V |
| Vgs th - Gate-Source Threshold Voltage | 1 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 30 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 25 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±16В |