BSC019N04NSGATMA1, Trans MOSFET N-CH 40V 29A 8-Pin TDSON EP T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001293079
- Артикул
- BSC019N04NSGATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- PPAP
- No
- Width
- 5.35mm
- Series
- OptiMOS 3
- EU RoHS
- Compliant with Exemption
Цена по запросу
(от 120 ₽)
Минимальный заказ: 5000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET N-CH 40V 29A 8-контактный TDSON EP T/R
Технические параметры
| PPAP | No |
| Width | 5.35mm |
| Series | OptiMOS 3 |
| EU RoHS | Compliant with Exemption |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 8 |
| Automotive | No |
| Lead Shape | No Lead |
| Вес, г | 8 |
| PCB changed | 8 |
| Part Status | Active |
| Channel Mode | Enhancement |
| Channel Type | N |
| Package Type | TDSON |
| Configuration | Single Quad Drain Triple Source |
| Mounting Type | Surface Mount |
| Product Category | Power MOSFET |
| Supplier Package | TDSON EP |
| Process Technology | OptiMOS |
| Структура | N-Channel |
| Transistor Material | Si |
| Forward Diode Voltage | 1.2V |
| Standard Package Name | SON |
| Typical Fall Time (ns) | 6.6 |
| Typical Rise Time (ns) | 5.6 |
| Особенности | - |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 125 W |
| Typical Gate Charge @ Vgs | 81 nC @ 10 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 40 V |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Power Dissipation (mW) | 2500 |
| Minimum Gate Threshold Voltage | 2V |
| Typical Gate Charge @ 10V (nC) | 81 |
| Typical Gate Charge @ Vgs (nC) | 81 10V |
| Maximum Drain Source Resistance | 1.9 mΩ |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 22 |
| Maximum Continuous Drain Current | 100 A |
| Maximum Drain Source Voltage (V) | 40 |
| Typical Turn-Off Delay Time (ns) | 33 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 29 |
| Typical Input Capacitance @ Vds (pF) | 6600 20V |
| Maximum Drain Source Resistance (mOhm) | 1.9 10V |
| Пороговое напряжение на затворе | -20 V, +20 V |
| Максимальное напряжение сток-исток Uси,В | 40 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 29 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 125 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |