OptiMOS Type N-Channel MOSFET, 257 A, 60 V, 8-Pin TDSON BSC014N06NSTATMA1
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8030973501
- Артикул
- BSC014N06NSTATMA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- Brand:
- Infineon Technologies
- FET Type
- N-Channel
- Vgs (Max)
- ±20V
- Fall Time:
- 11 ns
Цена по запросу
(от 1 110 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Мощный МОП-транзистор Infineon OptiMOS 5 в корпусе SuperSO8 сочетает в себе новейшие теxнологии и улучшенную температуру.
Технические параметры
| Brand: | Infineon Technologies |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Fall Time: | 11 ns |
| Rise Time: | 10 ns |
| Technology | MOSFET(Metal Oxide) |
| Вес, г | 1 |
| Technology: | Si |
| Package Type | TDSON-8 |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Manufacturer: | Infineon |
| Mounting Type | Surface Mount |
| Product Type: | MOSFET |
| Configuration: | Single |
| Package / Case | 8-PowerTDFN |
| Mounting Style: | SMD/SMT |
| Package / Case: | TDSON-8 |
| Part # Aliases: | BSC014N06NST SP001657072 |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Qg - Gate Charge: | 89 nC |
| Vgs(th) (Max) @ Id | 3.3V @ 120µA |
| Структура | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Polarity: | N-Channel |
| Operating Temperature | -55°C ~ 175°C(TJ) |
| Rds On (Max) @ Id, Vgs | 1.45mOhm @ 50A, 10V |
| Особенности | - |
| Pd - Power Dissipation: | 156 W |
| Power Dissipation (Max) | 3W(Ta), 188W(Tc) |
| Supplier Device Package | PG-TDSON-8 FL |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 23 ns |
| Gate Charge (Qg) (Max) @ Vgs | 104 nC @ 10 V |
| Typical Turn-Off Delay Time: | 43 ns |
| Drain to Source Voltage (Vdss) | 60 V |
| Id - Continuous Drain Current: | 100 A |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 75 S |
| Rds On - Drain-Source Resistance: | 1.45 mOhms |
| Input Capacitance (Ciss) (Max) @ Vds | 8125 pF @ 30 V |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 100A(Tc) |
| Vgs th - Gate-Source Threshold Voltage: | 2.1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 5000 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 188 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |