BS107P, Транзистор: N-MOSFET, полевой, 200В, 0,12А, 0,5Вт, TO92
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- Код товара
- 8025350780
- Артикул
- BS107P
- Бренд
- DIODES INC.
- RoHS
- Details
- Type
- FET
- Brand
- Diodes Incorporated
- Type:
- FET
Цена по запросу
(от 116,77 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: N-MOSFET, полевой, 200В, 0,12А, 0,5Вт, TO92 Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| RoHS | Details |
| Type | FET |
| Brand | Diodes Incorporated |
| Type: | FET |
| Width | 2.41 mm |
| Brand: | Diodes Incorporated |
| Height | 4.01 mm |
| Length | 4.77 mm |
| Series | BS107 |
| Product | MOSFET Small Signal |
| Series: | BS107 |
| Product: | MOSFET Small Signals |
| Packaging | Bulk |
| Fall Time: | 8 ns |
| Packaging: | Bulk |
| Rise Time: | 8 ns |
| Technology | Si |
| Вес, г | 0.16 |
| Technology: | Si |
| Channel Mode | Enhancement |
| Manufacturer | Diodes Incorporated |
| Subcategory: | MOSFETs |
| Channel Mode: | Enhancement |
| Configuration | Single |
| Manufacturer: | Diodes Incorporated |
| Product Type: | MOSFET |
| Configuration: | Single |
| Mounting Style | Through Hole |
| Package / Case | TO-92-3 |
| Mounting Style: | Through Hole |
| Package / Case: | TO-92-3 |
| Transistor Type | 1 N-Channel |
| Product Category | MOSFET |
| Transistor Type: | 1 N-Channel |
| Product Category: | MOSFET |
| Number of Channels | 1 Channel |
| Структура | MOSFET |
| Number of Channels: | 1 Channel |
| Transistor Polarity | N-Channel |
| Transistor Polarity: | N-Channel |
| Factory Pack Quantity | 4000 |
| Pd - Power Dissipation | 500 mW |
| Особенности | - |
| Pd - Power Dissipation: | 500 mW |
| Vgs - Gate-Source Voltage | 20 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Typical Turn-On Delay Time: | 7 ns |
| Typical Turn-Off Delay Time: | 16 ns |
| Id - Continuous Drain Current | 120 mA |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Id - Continuous Drain Current: | 120 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Forward Transconductance - Min: | 100 mS |
| Rds On - Drain-Source Resistance | 15 Ohms |
| Rds On - Drain-Source Resistance: | 30 Ohms |
| Vds - Drain-Source Breakdown Voltage | 200 V |
| Vds - Drain-Source Breakdown Voltage: | 200 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
| Factory Pack Quantity: Factory Pack Quantity: | 4000 |
| Пороговое напряжение на затворе | - |
| Максимальное напряжение сток-исток Uси,В | 200 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 0.12 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 0.5 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |