BFU730F,115, Trans RF BJT NPN 2.8V 0.03A 197mW 4-Pin DFP T/R
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- Код товара
- 8001222961
- Артикул
- BFU730F,115
- Бренд
- NXP Semiconductor
- HTS
- 8541.21.00.75
- Tab
- Tab
- Type
- NPN
- Type:
- RF Silicon Germanium
Цена по запросу
(от 72 ₽)
Минимальный заказ: 1298 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| HTS | 8541.21.00.75 |
| Tab | Tab |
| Type | NPN |
| Type: | RF Silicon Germanium |
| Brand: | NXP Semiconductors |
| EU RoHS | Compliant |
| Material | SiGe |
| Military | No |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 4 |
| Automotive | No |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | SiGe |
| Subcategory: | Transistors |
| Configuration | Single Dual Emitter |
| Manufacturer: | NXP |
| Package Width | 1.35(Max) |
| Product Type: | RF Bipolar Transistors |
| Package Height | 0.75(Max) |
| Package Length | 2.2(Max) |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT343F-4 |
| Part # Aliases: | 934064614115 |
| Supplier Package | DFP |
| Transistor Type: | Bipolar |
| Product Category: | RF Bipolar Transistors |
| Структура | npn |
| Operating Frequency: | 55 GHz |
| Standard Package Name | DFP |
| Minimum DC Current Gain | 205@2mA@2V |
| Pd - Power Dissipation: | 197 mW |
| Typical Power Gain (dB) | 29 |
| DC Current Gain hFE Max: | 555 |
| Maximum Noise Figure (dB) | 1.3(Typ) |
| Emitter- Base Voltage VEBO: | 1 V |
| Number of Elements per Chip | 1 |
| Operational Bias Conditions | 2.5V/20mA |
| Collector- Base Voltage VCBO: | 10 V |
| Continuous Collector Current: | 5 mA |
| Minimum DC Current Gain Range | 200 to 300 |
| Maximum Power Dissipation (mW) | 197 |
| Typical Input Capacitance (pF) | 0.442 |
| DC Collector/Base Gain hfe Min: | 205 |
| Typical Output Capacitance (pF) | 0.055 |
| Maximum DC Collector Current (A) | 0.03 |
| Maximum Emitter Base Voltage (V) | 1 |
| Maximum Collector Base Voltage (V) | 10 |
| Maximum Transition Frequency (MHz) | 55000(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power 1dB Compression (dBm) | 12.5(Typ) |
| Minimum Operating Temperature (°C) | -65 |
| Collector- Emitter Voltage VCEO Max: | 2.8 V |
| Maximum Collector-Emitter Voltage (V) | 2.8 |
| Maximum Collector Cut-Off Current (nA) | 100 |
| Maximum DC Collector Current Range (A) | 0.001 to 0.06 |
| Maximum 3rd Order Intercept Point (dBm) | 29(Typ) |
| Maximum Collector-Emitter Voltage Range (V) | <20 |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |