BFU630F,115, Trans RF BJT NPN 5.5V 0.03A 200mW 4-Pin DFP T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001033983
- Артикул
- BFU630F,115
- Бренд
- NXP Semiconductor
- Tab
- Tab
- PPAP
- No
- Type
- NPN
- EU RoHS
- Compliant
Цена по запросу
(от 60 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: NPN, биполярный, RF, 5,5В, 30мА, 200мВт, SOT343F Характеристики Категория Транзистор Тип биполярный Вид NPN
Технические параметры
| Tab | Tab |
| PPAP | No |
| Type | NPN |
| EU RoHS | Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 4 |
| Automotive | No |
| Вес, г | 0.3 |
| PCB changed | 3 |
| Part Status | Active |
| Configuration | Single Dual Emitter |
| Supplier Package | DFP |
| Структура | npn |
| Standard Package Name | DFP |
| Minimum DC Current Gain | 90 5mA 2V |
| Typical Power Gain (dB) | 27 |
| Maximum Noise Figure (dB) | 1.3(Typ) |
| Number of Elements per Chip | 1 |
| Operational Bias Conditions | 2.5V/30mA |
| Minimum DC Current Gain Range | 50 to 120 |
| Maximum Power Dissipation (mW) | 200 |
| Typical Input Capacitance (pF) | 0.332 |
| Typical Output Capacitance (pF) | 0.047 |
| Maximum DC Collector Current (A) | 0.03 |
| Maximum Emitter Base Voltage (V) | 2.5 |
| Maximum Collector Base Voltage (V) | 16 |
| Maximum Transition Frequency (MHz) | 21000(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power 1dB Compression (dBm) | 12.5(Typ) |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Collector-Emitter Voltage (V) | 5.5 |
| Maximum Collector Cut-Off Current (nA) | 100 |
| Maximum DC Collector Current Range (A) | 0.001 to 0.06 |
| Maximum 3rd Order Intercept Point (dBm) | 27.5(Typ) |
| Maximum Collector-Emitter Voltage Range (V) | <20 |