BD681G, Darlington Transistors 4A 100V Bipolar Power NPN
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8005368702
- Артикул
- BD681G
- Бренд
- ON Semiconductor***
- Tab
- Tab
- PPAP
- No
- Type
- NPN
- Brand
- onsemi
Цена по запросу
(от 117,51 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор NPN, биполярный, Дарлингтон, 100В, 4А, 40Вт, TO126
Технические параметры
| Tab | Tab |
| PPAP | No |
| Type | NPN |
| Brand | onsemi |
| Brand: | onsemi |
| EU RoHS | Compliant |
| Series: | BD681 |
| Mounting | Through Hole |
| Polarity | NPN |
| ECCN (US) | EAR99 |
| Packaging | Box |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Through Hole |
| Packaging: | Bulk |
| Вес, г | 0.68 |
| PCB changed | 3 |
| Part Status | Active |
| Package Type | TO-225 |
| Rad Hardened | No |
| Subcategory: | Transistors |
| Корпус | to-126 |
| Configuration | Single |
| Manufacturer: | onsemi |
| Mounting Type | Through Hole |
| Product Type: | Darlington Transistors |
| Configuration: | Single |
| DC Current Gain | 750 |
| Mounting Style: | Through Hole |
| Package / Case: | TO-225AA |
| Transistor Type | NPN |
| Supplier Package | TO-225 |
| Power Dissipation | 40(W) |
| Product Category: | Darlington Transistors |
| Number of Elements | 1 |
| Структура | npn darlington с 2 резисторами и диодом |
| Emitter-Base Voltage | 5(V) |
| Operating Temp Range | -55C to 150C |
| Transistor Polarity: | NPN |
| Collector Current (DC) | 4(A) |
| Collector-Base Voltage | 100(V) |
| Minimum DC Current Gain | 750 1.5A 3V |
| Transistor Configuration | Single |
| Collector-Emitter Voltage | 100(V) |
| Emitter- Base Voltage VEBO: | 5 V |
| Number of Elements per Chip | 1 |
| Collector Current (DC) (Max) | 4 A |
| Maximum Emitter Base Voltage | 5 V |
| Collector- Base Voltage VCBO: | 100 V |
| Maximum DC Collector Current: | 4 A |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
| Maximum Collector Base Voltage | 100 V |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 40000 |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 750 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Cut-off Current | 200 |
| Maximum Collector Emitter Voltage | 100 V |
| Maximum Collector Base Voltage (V) | 100 |
| Maximum Collector Cut-off Current: | 200 uA |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Collector- Emitter Voltage VCEO Max: | 100 V |
| Collector-Emitter Saturation Voltage | 2.5(V) |
| Maximum Continuous Collector Current | 4 A |
| Operating Temperature Classification | Military |
| Maximum Collector-Emitter Voltage (V) | 100 |
| Maximum Collector Cut-Off Current (uA) | 200 |
| Maximum Continuous DC Collector Current (A) | 4 |
| Maximum Collector Emitter Saturation Voltage | 2.5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 500 |
| Maximum Collector-Emitter Saturation Voltage (V) | 2.5 30mA 1.5A |
| Максимальная рассеиваемая мощность ,Вт | 40 |
| Максимально допустимый ток к ( Iк макс.А) | 4 |
| Статический коэффициент передачи тока h21э мин | 750 |
| Макс. напр. к-э при заданном токе к и разомкнутой цепи б.(Uкэо макс),В | 100 |
| Макс. напр. к-б при заданном обратном токе к и разомкнутой цепи э.(Uкбо макс),В | 100 |