BD441G, Транзистор: NPN, биполярный, 80В, 4А, 36Вт, TO126
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- Код товара
- 8061955439
- Артикул
- BD441G
- Бренд
- ON Semiconductor***
- HTS
- 8541.29.00.95
- Tab
- Tab
- RoHS
- Details
- Type
- NPN
Цена по запросу
(от 97,42 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Эта серия пластиковыx NPN-транзисторов средней мощности может быть использована в усилителяx и коммутатораx.
Технические параметры
| HTS | 8541.29.00.95 |
| Tab | Tab |
| RoHS | Details |
| Type | NPN |
| Brand | ON Semiconductor |
| Width | 2.66 mm(Max) |
| Height | 11.04 mm(Max) |
| Length | 7.74 mm(Max) |
| Series | BD441 |
| EU RoHS | Compliant |
| Material | Si |
| Military | No |
| Mounting | Through Hole |
| ECCN (US) | EAR99 |
| Packaging | Box |
| Pin Count | 3 |
| Automotive | No |
| Вес, г | 0.65 |
| PCB changed | 3 |
| Part Status | Active |
| Manufacturer | ON Semiconductor |
| Package Type | TO-225 |
| Корпус | to-126 |
| Configuration | Single |
| Mounting Type | Through Hole |
| Package Width | 2.66(Max) |
| Mounting Style | Through Hole |
| Package / Case | TO-225-3 |
| Package Height | 11.04(Max) |
| Package Length | 7.74(Max) |
| Transistor Type | NPN |
| Product Category | Bipolar Power |
| Supplier Package | TO-225 |
| Структура | npn |
| Transistor Polarity | NPN |
| Factory Pack Quantity | 500 |
| Pd - Power Dissipation | 36 W |
| Minimum DC Current Gain | 15@2A@1V|40@0.5A@1V|30@3A@1V|15@10mA@5V |
| Transistor Configuration | Single |
| Gain Bandwidth Product fT | 3 MHz |
| Maximum Power Dissipation | 36 W |
| Emitter- Base Voltage VEBO | 5 V |
| Number of Elements per Chip | 1 |
| Collector- Base Voltage VCBO | 80 V |
| Continuous Collector Current | 4 A |
| Maximum DC Collector Current | 4 A |
| Maximum Emitter Base Voltage | 5 V dc |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| DC Collector/Base Gain hfe Min | 15 |
| Maximum Power Dissipation (mW) | 36000 |
| Maximum DC Collector Current (A) | 4 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Emitter Voltage | 80 V dc |
| Maximum Collector Base Voltage (V) | 80 |
| Maximum Transition Frequency (MHz) | 3(Min) |
| Collector- Emitter Voltage VCEO Max | 80 V |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Collector-Emitter Saturation Voltage | 0.8 V |
| Maximum Collector-Emitter Voltage (V) | 80 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.8@0.2A@2A |
| Максимальная рассеиваемая мощность ,Вт | 36 |
| Максимально допустимый ток к ( Iк макс.А) | 4 |
| Макс. напр. к-э при заданном токе к и разомкнутой цепи б.(Uкэо макс),В | 80 |