Bipolar junction transistor, PNP, 6 A, 100 V, THT, TO-220, BD244CG
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8029587809
- Артикул
- BD244CG
- Бренд
- ON Semiconductor***
- RoHS
- Details
- Brand
- ON Semiconductor
- Width
- 4.82 mm(Max)
- Brand:
- onsemi
Цена по запросу
(от 290 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор, BD244CG, НА полупроводнике Эти устройства предназначены для использования в усилителяx общего назначения и коммутатораx. Особенности Продукт с высоким коэффициентом усиления по току в полосе пропускания Эти устройства не содержат Pb и соответствуют требованиям RoHS
Технические параметры
| RoHS | Details |
| Brand | ON Semiconductor |
| Width | 4.82 mm(Max) |
| Brand: | onsemi |
| Height | 9.28 mm(Max) |
| Length | 10.28 mm(Max) |
| Series | BD244C |
| Series: | BD244C |
| Version | PNP |
| Assembly | THT |
| Enclosure | TO-220 |
| Packaging | Tube |
| Pin Count | 3 |
| Packaging: | Tube |
| Вес, г | 0.05 |
| Min DC gain | 15 mA |
| Technology: | Si |
| Unit Weight | 0.211644 oz |
| Manufacturer | ON Semiconductor |
| Package Type | TO-220 |
| Subcategory: | Transistors |
| Корпус | TO-220AB |
| Configuration | Single |
| Manufacturer: | onsemi |
| Mounting Type | Through Hole |
| Product Type: | BJTs-Bipolar Transistors |
| Rated current | 6 A |
| Configuration: | Single |
| Mounting Style | Through Hole |
| Package / Case | TO-220-3 |
| Mounting Style: | Through Hole |
| Package / Case: | TO-220-3 |
| Transistor Type | PNP |
| Product Category | Bipolar Transistors-BJT |
| Collector current | 6 A |
| Power dissipation | 65 W |
| Product Category: | Bipolar Transistors-BJT |
| Saturation voltage | 1.5 V |
| Структура | pnp |
| Transistor Polarity | PNP |
| Transistor Polarity: | PNP |
| Factory Pack Quantity | 50 |
| Pd - Power Dissipation | 65 W |
| Minimum DC Current Gain | 30 |
| Pd - Power Dissipation: | 65 W |
| Transit frequency fTmin | 3 MHz |
| Transistor Configuration | Single |
| Gain Bandwidth Product fT | 3 MHz |
| Maximum Power Dissipation | 65 W |
| Emitter- Base Voltage VEBO | 5 V |
| Gain Bandwidth Product fT: | 3 MHz |
| max. operating temperature | 150 °C |
| min. operating temperature | -65 °C |
| Emitter- Base Voltage VEBO: | 5 V |
| Number of Elements per Chip | 1 |
| Collector- Base Voltage VCBO | 100 V |
| Continuous Collector Current | 6 A |
| Maximum DC Collector Current | 6 A |
| Maximum Emitter Base Voltage | 5 V dc |
| Collector- Base Voltage VCBO: | 100 V |
| Continuous Collector Current: | 6 A |
| Maximum DC Collector Current: | 6 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -65 C |
| DC Collector/Base Gain hfe Min | 30 |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -65 C |
| DC Collector/Base Gain hfe Min: | 30 |
| Maximum Collector Emitter Voltage | -100 V |
| Collector- Emitter Voltage VCEO Max | 100 V |
| Collector- Emitter Voltage VCEO Max: | 100 V |
| Collector-Emitter Saturation Voltage | 1.5 V |
| Collector-Emitter Saturation Voltage: | 1.5 V |
| max.voltage between collector and base Vcbo | 100 V |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |
| max.voltage between collector and emitter Vceo | 100 V |