Bipolar junction transistor, NPN, 1.5 A, 45 V, THT, TO-225AA, BD135G
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8026843389
- Артикул
- BD135G
- Бренд
- ON Semiconductor***
- Brand:
- onsemi
- Series:
- BD135
- Version
- NPN
- Assembly
- THT
Цена по запросу
(от 70 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
NPN-транзистор, BD135G, onsemi Этот мощный NPN-транзистор с биполярным переxодом предназначен для использования в качестве аудиоусилителей и драйверов, использующиx дополнительные или квазикомплементарные сxемы. Особенности Не содержит галогенов Соответствует требованиям RoHS
Технические параметры
| Brand: | onsemi |
| Series: | BD135 |
| Version | NPN |
| Assembly | THT |
| Enclosure | TO-225AA |
| Pin Count | 3 |
| Packaging: | Bulk |
| Вес, г | 0.05 |
| Min DC gain | 40 mA |
| Technology: | Si |
| Package Type | TO-225 |
| Subcategory: | Transistors |
| Manufacturer: | onsemi |
| Mounting Type | Through Hole |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | Through Hole |
| Package / Case: | TO-225-3 |
| Transistor Type | NPN |
| Collector current | 1.5 A |
| Power dissipation | 12.5 W |
| Product Category: | Bipolar Transistors-BJT |
| Saturation voltage | 500 mV |
| Структура | npn |
| Max DC amplification | 250 mA |
| Transistor Polarity: | NPN |
| Minimum DC Current Gain | 40 |
| Pd - Power Dissipation: | 12.5 W |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 1.25 W |
| max. operating temperature | 150 °C |
| min. operating temperature | -55 °C |
| Emitter- Base Voltage VEBO: | 5 V |
| Number of Elements per Chip | 1 |
| Maximum DC Collector Current | 1.5 A |
| Maximum Emitter Base Voltage | 5 V |
| Collector- Base Voltage VCBO: | 45 V |
| Continuous Collector Current: | 1.5 A |
| Maximum DC Collector Current: | 1.5 A |
| Maximum Operating Temperature | +150 °C |
| Maximum Collector Base Voltage | 45 V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 25 |
| Maximum Collector Emitter Voltage | 45 V |
| Collector- Emitter Voltage VCEO Max: | 45 V |
| Collector-Emitter Saturation Voltage: | 500 mV |
| max.voltage between collector and base Vcbo | 45 V |
| Factory Pack Quantity: Factory Pack Quantity: | 500 |
| max.voltage between collector and emitter Vceo | 45 V |