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BCX6825TA, Trans GP BJT NPN 20V 1A 1000mW 4-Pin(3+Tab) SOT-89 T/R

BCX6825TA, Trans GP BJT NPN 20V 1A 1000mW 4-Pin(3+Tab) SOT-89 T/R

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Код товара
8001120279
Артикул
BCX6825TA
Бренд
DIODES INC.
Brand
Diodes Incorporated
Brand:
Diodes Incorporated
Series
BCX68
Series:
BCX68
Цена по запросу
(от 23 ₽)
Минимальный заказ: 1400 шт.

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Описание Транзистор: NPN, биполярный, 20В, 1А, 1Вт, SOT89 Характеристики Категория Транзистор Тип биполярный Вид NPN

Технические параметры

BrandDiodes Incorporated
Brand:Diodes Incorporated
SeriesBCX68
Series:BCX68
PackagingCut Tape or Reel
Pin Count3
Вес, г1
SubcategoryTransistors
Technology:Si
ManufacturerDiodes Incorporated
Package TypeSOT-89
Product TypeBJTs-Bipolar Transistors
Subcategory:Transistors
КорпусSOT-89/TO-243
ConfigurationSingle
Manufacturer:Diodes Incorporated
Mounting TypeSurface Mount
Product Type:BJTs-Bipolar Transistors
Configuration:Single
Mounting StyleSMD/SMT
Package / CaseSOT-89-3
Mounting Style:SMD/SMT
Package / Case:SOT-89-3
Transistor TypeNPN
Product CategoryBipolar Transistors-BJT
Product Category:Bipolar Transistors-BJT
Структураnpn
Transistor PolarityNPN
Transistor Polarity:NPN
Factory Pack Quantity1000
Pd - Power Dissipation1 W
DC Current Gain HFE Max160 at 500 mA, 1 V
Minimum DC Current Gain160
Pd - Power Dissipation:1 W
DC Current Gain hFE Max:160 at 500 mA, 1 V
Transistor ConfigurationSingle
Gain Bandwidth Product FT100 MHz
Maximum Power Dissipation1 W
Emitter- Base Voltage VEBO5 V
Gain Bandwidth Product fT:100 MHz
Emitter- Base Voltage VEBO:5 V
Maximum Operating Frequency100 MHz
Number of Elements per Chip1
Collector- Base Voltage VCBO25 V
Continuous Collector Current1 A
Maximum DC Collector Current1 A
Maximum Emitter Base Voltage5 V
Collector- Base Voltage VCBO:25 V
Continuous Collector Current:1 A
Maximum DC Collector Current:1 A
Maximum Operating Temperature+150 C
Minimum Operating Temperature-65 C
DC Collector/Base Gain Hfe Min160
Maximum Collector Base Voltage25 V
Maximum Operating Temperature:+150 C
Minimum Operating Temperature:-65 C
DC Collector/Base Gain hfe Min:160
Maximum Collector Emitter Voltage20 V
Collector- Emitter Voltage VCEO Max20 V
Collector- Emitter Voltage VCEO Max:20 V
Collector-Emitter Saturation Voltage0.5 V
Collector-Emitter Saturation Voltage:500 mV
Factory Pack Quantity: Factory Pack Quantity:1000

Техническая документация