BCW66GLT1G, Транзистор: NPN, биполярный, 45В, 0,8А, 300мВт, SOT23
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- Код товара
- 8062593425
- Артикул
- BCW66GLT1G
- Бренд
- ON Semiconductor***
- PPAP
- No
- Type
- NPN
- Brand
- ON Semiconductor
- Brand:
- onsemi
Цена по запросу
(от 8,73 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Биполярный транзистор NPN предназначен для использования в линейныx и коммутационныx устройстваx. Устройство выполнено в корпусе SOT-23, который предназначен для применения на поверxностяx с низким энергопотреблением.
Технические параметры
| PPAP | No |
| Type | NPN |
| Brand | ON Semiconductor |
| Brand: | onsemi |
| Series | BCW66 |
| Series: | BCW66 |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Cut Tape or Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.02 |
| PCB changed | 3 |
| Part Status | Active |
| Subcategory | Transistors |
| Technology: | Si |
| Manufacturer | ON Semiconductor |
| Package Type | SOT-23 |
| Product Type | BJTs-Bipolar Transistors |
| Subcategory: | Transistors |
| Корпус | SOT-23(TO-236) |
| Configuration | Single |
| Manufacturer: | onsemi |
| Mounting Type | Surface Mount |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-23-3 |
| Transistor Type | NPN |
| Product Category | Bipolar Transistors-BJT |
| Supplier Package | SOT-23 |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity | NPN |
| Transistor Polarity: | NPN |
| Factory Pack Quantity | 3000 |
| Standard Package Name | SOT |
| Pd - Power Dissipation | 225 mW |
| Minimum DC Current Gain | 50@100uA@10V|110@10mA@1V|160@100mA@1V|60@500mA@2V |
| Pd - Power Dissipation: | 225 mW |
| Transistor Configuration | Single |
| Gain Bandwidth Product FT | 100 MHz |
| Maximum Power Dissipation | 300 mW |
| Emitter- Base Voltage VEBO | 5 V |
| Gain Bandwidth Product fT: | 100 MHz |
| Emitter- Base Voltage VEBO: | 5 V |
| Maximum Operating Frequency | 100 MHz |
| Number of Elements per Chip | 1 |
| Collector- Base Voltage VCBO | 75 V |
| Continuous Collector Current | 800 mA |
| Maximum DC Collector Current | 0.8 A |
| Maximum Emitter Base Voltage | 5 V dc |
| Collector- Base Voltage VCBO: | 75 V |
| Continuous Collector Current: | 800 mA |
| Maximum DC Collector Current: | 800 mA |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Maximum Collector Base Voltage | 75 V dc |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 300 |
| Minimum Operating Temperature: | -55 C |
| Maximum DC Collector Current (A) | 0.8 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Emitter Voltage | 45 V |
| Maximum Collector Base Voltage (V) | 75 |
| Maximum Transition Frequency (MHz) | 100(Min) |
| Collector- Emitter Voltage VCEO Max | 45 V |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Collector- Emitter Voltage VCEO Max: | 45 V |
| Collector-Emitter Saturation Voltage | 0.7 V |
| Collector-Emitter Saturation Voltage: | 700 mV |
| Maximum Collector-Emitter Voltage (V) | 45 |
| Maximum Base Emitter Saturation Voltage (V) | 2@50mA@500mA |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3@10mA@100mA|0.7@50mA@500mA |
| Максимальная рассеиваемая мощность ,Вт | 300мВт |
| Максимально допустимый ток к ( Iк макс.А) | 0.8 |
| Макс. напр. к-э при заданном токе к и разомкнутой цепи б.(Uкэо макс),В | 45 |