BCP53T1G, Bipolar Transistors - BJT 1.5A 100V PNP
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8005525949
- Артикул
- BCP53T1G
- Бренд
- ON Semiconductor***
- Tab
- Tab
- PPAP
- No
- Type
- PNP
- EU RoHS
- Compliant
Цена по запросу
(от 48,47 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: PNP, биполярный, 80В, 1,5А, 1,5Вт, SOT223 Характеристики Категория Транзистор Тип биполярный Вид PNP
Технические параметры
| Tab | Tab |
| PPAP | No |
| Type | PNP |
| EU RoHS | Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 4 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.23 |
| PCB changed | 3 |
| Part Status | Active |
| Power - Max | 1.5 W |
| Package Type | SOT-223(SC-73) |
| Configuration | Single Dual Collector |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Transistor Type | PNP |
| Product Category | Bipolar Power |
| Supplier Package | SOT-223 |
| Структура | pnp |
| Operating Temperature | -65°C ~ 150°C(TJ) |
| Standard Package Name | SOT |
| Frequency - Transition | 50MHz |
| Minimum DC Current Gain | 40 150mA 2V|25 500mA 2V|25 5mA 2V |
| Supplier Device Package | SOT-223(TO-261) |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 1.5 W |
| Maximum Operating Frequency | 35 MHz |
| Number of Elements per Chip | 1 |
| Maximum DC Collector Current | -1.5 A |
| Maximum Emitter Base Voltage | -5 V dc |
| Maximum Operating Temperature | +150 °C |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector (Ic) (Max) | 1.5 A |
| Maximum Collector Base Voltage | -100 V dc |
| Maximum Power Dissipation (mW) | 1500 |
| Current - Collector Cutoff (Max) | 100nA(ICBO) |
| Maximum DC Collector Current (A) | 1.5 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Emitter Voltage | -80 V |
| Maximum Collector Base Voltage (V) | 100 |
| Maximum Transition Frequency (MHz) | 50(Typ) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Operating Junction Temperature (°C) | -65 to 150 |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 2V |
| Maximum Collector-Emitter Voltage (V) | 80 |
| Maximum Collector Cut-Off Current (nA) | 100 |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.5 50mA 500mA |
| Максимально допустимый ток к ( Iк макс.А) | 1.5 |