BC858ALT1G, Trans GP BJT PNP 30V 0.1A 300mW 3-Pin SOT-23 T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8000995119
- Артикул
- BC858ALT1G
- Бренд
- ON Semiconductor***
- HTS
- 8541.29.00.95
- Type
- PNP
- Brand
- ON Semiconductor
- Series
- BC858AL
Цена по запросу
(от 3 ₽)
Минимальный заказ: 12000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: PNP, биполярный, 30В, 0,1А, 300мВт, SOT23 Характеристики Категория Транзистор Тип биполярный Вид PNP
Технические параметры
| HTS | 8541.29.00.95 |
| Type | PNP |
| Brand | ON Semiconductor |
| Series | BC858AL |
| EU RoHS | Compliant |
| Material | Si |
| Military | No |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Subcategory | Transistors |
| Manufacturer | ON Semiconductor |
| Package Type | SOT-23 |
| Product Type | BJTs-Bipolar Transistors |
| Корпус | SOT-23 |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Package Width | 1.3 |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-23-3 |
| Package Height | 0.94 |
| Package Length | 2.9 |
| Transistor Type | PNP |
| Product Category | Bipolar Small Signal |
| Supplier Package | SOT-23 |
| Структура | pnp |
| Transistor Polarity | PNP |
| Factory Pack Quantity | 3000 |
| Standard Package Name | SOT |
| Pd - Power Dissipation | 225 mW |
| Minimum DC Current Gain | 125@2mA@5V |
| Transistor Configuration | Single |
| Gain Bandwidth Product FT | 100 MHz |
| Maximum Power Dissipation | 225 mW |
| Emitter- Base Voltage VEBO | 5 V |
| Maximum Operating Frequency | 100 MHz |
| Number of Elements per Chip | 1 |
| Collector- Base Voltage VCBO | -80 V |
| Continuous Collector Current | -0.1 A |
| Maximum DC Collector Current | 0.1 A |
| Maximum Emitter Base Voltage | -5 V |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| DC Collector/Base Gain Hfe Min | 125 |
| Maximum Collector Base Voltage | -30 V |
| Maximum Power Dissipation (mW) | 300 |
| Maximum DC Collector Current (A) | 0.1 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Emitter Voltage | -30 V |
| Maximum Collector Base Voltage (V) | 30 |
| Maximum Transition Frequency (MHz) | 100(Min) |
| Collector- Emitter Voltage VCEO Max | -65 V |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Collector-Emitter Saturation Voltage | -0.65 V |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Collector-Emitter Voltage (V) | 30 |
| Maximum Collector Cut-Off Current (nA) | 15 |
| Maximum Base Emitter Saturation Voltage (V) | 0.9(Typ)@5mA@100mA|0.7(Typ)@0.5mA@10mA |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3@0.5mA@10mA|0.65@5mA@100mA |
| Максимально допустимый ток к ( Iк макс.А) | 0.1 |