BC857CWT1G, Bipolar Transistors - BJT 100mA 50V PNP
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8005368661
- Артикул
- BC857CWT1G
- Бренд
- ON Semiconductor***
- PPAP
- No
- Type
- PNP
- EU RoHS
- Compliant
- Material
- Si
Цена по запросу
(от 10,54 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Биполярный транзистор, PNP, 45 В, 0.1 А, 0.15 Вт
Технические параметры
| PPAP | No |
| Type | PNP |
| EU RoHS | Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.01 |
| PCB changed | 3 |
| Part Status | Active |
| Package Type | SOT-323(SC-70) |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Product Category | Bipolar Small Signal |
| Supplier Package | SC-70 |
| Структура | pnp |
| Standard Package Name | SOT |
| Minimum DC Current Gain | 420@2mA@5V |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 150 mW |
| Maximum Operating Frequency | 100 MHz |
| Number of Elements per Chip | 1 |
| Maximum DC Collector Current | -100 mA |
| Maximum Emitter Base Voltage | -5 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Collector Base Voltage | -50 V |
| Maximum Power Dissipation (mW) | 150 |
| Maximum DC Collector Current (A) | 0.1 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Emitter Voltage | -45 V |
| Maximum Collector Base Voltage (V) | 50 |
| Maximum Transition Frequency (MHz) | 100(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Maximum Collector-Emitter Voltage (V) | 45 |
| Maximum Collector Cut-Off Current (nA) | 15 |
| Maximum Base Emitter Saturation Voltage (V) | 0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3@0.5mA@10mA|0.65@5mA@100mA |