BC857BV-7, 45V 150mW 290@2mA,5V 100mA 2PCSPNP SOT-563 BIpolar TransIstors - BJT
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8025032269
- Артикул
- BC857BV-7
- Бренд
- DIODES INC.
- PPAP
- No
- Type
- PNP
- Brand:
- Diodes Incorporated
- EU RoHS
- Compliant
Цена по запросу
(от 18 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Trans GP BJT PNP 45V 0.1A 150 МВт 6-контактный SOT-563 T/R
Технические параметры
| PPAP | No |
| Type | PNP |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant |
| Series: | BC857B |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | No |
| Lead Shape | Flat |
| Вес, г | 0.05 |
| PCB changed | 6 |
| Part Status | Active |
| Technology: | Si |
| Subcategory: | Transistors |
| Configuration | Dual |
| Manufacturer: | Diodes Incorporated |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-563-6 |
| Transistor Type | PNP |
| Product Category | Bipolar Small Signal |
| Supplier Package | SOT-563 |
| Product Category: | Bipolar Transistors-BJT |
| Структура | pnp |
| Transistor Polarity: | PNP |
| Standard Package Name | SOT |
| Collector Current (Ic) | 100mA |
| Power Dissipation (Pd) | 150mW |
| Minimum DC Current Gain | 220 2mA 5V |
| Pd - Power Dissipation: | 150 mW |
| Transition Frequency (fT) | 100MHz |
| Gain Bandwidth Product fT: | 100 MHz |
| Emitter- Base Voltage VEBO: | 5 V |
| Number of Elements per Chip | 2 |
| DC Current Gain (hFE@Ic,Vce) | 290@2mA, 5V |
| Collector- Base Voltage VCBO: | 50 V |
| Maximum DC Collector Current: | 100 mA |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 150 |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 220 at-2 mA, -5 V |
| Collector Cut-Off Current (Icbo) | 15nA |
| Maximum DC Collector Current (A) | 0.1 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 50 |
| Maximum Transition Frequency (MHz) | 100(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Collector- Emitter Voltage VCEO Max: | 45 V |
| Collector-Emitter Saturation Voltage: | 400 mV |
| Maximum Collector-Emitter Voltage (V) | 45 |
| Collector-Emitter Breakdown Voltage (Vceo) | 45V |
| Maximum Base Emitter Saturation Voltage (V) | 0.7(Typ)0.5mA 10mA|0.9(Typ)5mA 100mA |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.1 0.5mA 10mA|0.4 5mA 100mA |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 400mV@100mA, 5mA |