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BC857BTT1G, Bipolar Transistors - BJT 100mA 50V PNP

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Код товара
8005368657
Артикул
BC857BTT1G
Бренд
ON Semiconductor***
PPAP
No
Type
PNP
EU RoHS
Compliant
Material
Si
Цена по запросу
(от 10,78 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Trans GP BJT PNP 45V 0.1A 300 МВт 3-контактный SOT-416 T/R

Технические параметры

PPAPNo
TypePNP
EU RoHSCompliant
MaterialSi
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
Вес, г1
PCB changed3
Part StatusActive
Package TypeSOT-416(SC-75)
КорпусSC-75
ConfigurationSingle
Mounting TypeSurface Mount
Transistor TypePNP
Product CategoryBipolar Small Signal
Supplier PackageSOT-416
Структураpnp
Standard Package NameSOT
Minimum DC Current Gain220 2mA 5V
Transistor ConfigurationSingle
Maximum Power Dissipation200 mW
Supplier Temperature GradeAutomotive
Maximum Operating Frequency100 MHz
Number of Elements per Chip1
Maximum DC Collector Current-100 mA
Maximum Emitter Base Voltage-5 V
Maximum Operating Temperature+150 °C
Maximum Collector Base Voltage-50 V
Maximum Power Dissipation (mW)300
Maximum DC Collector Current (A)0.1
Maximum Emitter Base Voltage (V)5
Maximum Collector Emitter Voltage-45 V
Maximum Collector Base Voltage (V)50
Maximum Transition Frequency (MHz)100(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Maximum Collector-Emitter Voltage (V)45
Maximum Collector Cut-Off Current (nA)15
Maximum Base Emitter Saturation Voltage (V)0.7(Typ)0.5mA 10mA|0.9(Typ)5mA 100mA
Maximum Collector-Emitter Saturation Voltage (V)0.3 0.5mA 10mA|0.65 5mA 100mA

Техническая документация