BC857BS-13-F, Bipolar Transistors - BJT PNP Small SIG -50V -45V VCEO 6.0V VEBO
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8005058153
- Артикул
- BC857BS-13-F
- Бренд
- DIODES INC.
- Brand:
- Diodes Incorporated
- Series:
- BC857B
- Вес, г
- 0.01
- Technology:
- Si
Цена по запросу
(от 21,08 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Diodes Incorporated |
| Series: | BC857B |
| Вес, г | 0.01 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | Diodes Incorporated |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-363-6 |
| Product Category: | Bipolar Transistors-BJT |
| Структура | pnp |
| Transistor Polarity: | PNP |
| Pd - Power Dissipation: | 200 mW |
| DC Current Gain hFE Max: | 475 |
| Gain Bandwidth Product fT: | 100 MHz |
| Emitter- Base Voltage VEBO: | 5 V |
| Collector- Base Voltage VCBO: | 50 V |
| Continuous Collector Current: | -100 mA |
| Maximum DC Collector Current: | 100 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 220 |
| Collector- Emitter Voltage VCEO Max: | 45 V |
| Collector-Emitter Saturation Voltage: | 400 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 10000 |