BC857BLP4-7B, Bipolar Transistors - BJT General Purpose Tran X1-DFN1006-3,10K
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- Код товара
- 8005058151
- Артикул
- BC857BLP4-7B
- Бренд
- DIODES INC.
- Brand:
- Diodes Incorporated
- Series:
- BC857B
- Вес, г
- 8
- Technology:
- Si
Цена по запросу
(от 68,36 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Diodes Incorporated |
| Series: | BC857B |
| Вес, г | 8 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | Diodes Incorporated |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | DFN1006H4-3 |
| Product Category: | Bipolar Transistors-BJT |
| Transistor Polarity: | PNP |
| Pd - Power Dissipation: | 400 mW |
| Gain Bandwidth Product fT: | 100 MHz |
| Emitter- Base Voltage VEBO: | 5 V |
| Collector- Base Voltage VCBO: | 50 V |
| Continuous Collector Current: | -100 mA |
| Maximum DC Collector Current: | 100 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 220 at-2 mA, -5 V |
| Collector- Emitter Voltage VCEO Max: | 45 V |
| Collector-Emitter Saturation Voltage: | 250 mV |
| Factory Pack Quantity: Factory Pack Quantity: | 10000 |