BC856BM3T5G, Транзистор: PNP
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8033438396
- Артикул
- BC856BM3T5G
- Бренд
- ON Semiconductor***
- PPAP
- No
- Type
- PNP
- EU RoHS
- Compliant
- Material
- Si
Цена по запросу
(от 10,10 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Trans GP BJT PNP 65V 0.1A 640 МВт 3-контактный SOT-723 T/R
Технические параметры
| PPAP | No |
| Type | PNP |
| EU RoHS | Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Flat |
| Вес, г | 0.01 |
| PCB changed | 3 |
| Part Status | Active |
| Package Type | SOT-723 |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Product Category | Bipolar Small Signal |
| Supplier Package | SOT-723 |
| Структура | pnp |
| Standard Package Name | SOT-723 |
| Collector Current (Ic) | 100mA |
| Power Dissipation (Pd) | 265mW |
| Minimum DC Current Gain | 220 2mA 5V |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 265 mW |
| Transition Frequency (fT) | 100MHz |
| Maximum Operating Frequency | 100 MHz |
| Number of Elements per Chip | 1 |
| DC Current Gain (hFE@Ic,Vce) | 220@2mA, 5V |
| Maximum DC Collector Current | -100 mA |
| Maximum Emitter Base Voltage | -5 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Collector Base Voltage | -80 V |
| Maximum Power Dissipation (mW) | 640 |
| Collector Cut-Off Current (Icbo) | 15nA |
| Maximum DC Collector Current (A) | 0.1 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Emitter Voltage | -65 V |
| Maximum Collector Base Voltage (V) | 80 |
| Maximum Transition Frequency (MHz) | 100(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 65 |
| Maximum Collector Cut-Off Current (nA) | 15 |
| Collector-Emitter Breakdown Voltage (Vceo) | 65V |
| Maximum Base Emitter Saturation Voltage (V) | 0.7(Typ)0.5mA 10mA|0.9(Typ)5mA 100mA |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3 0.5mA 10mA|0.65 5mA 100mA |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 650mV@100mA, 5mA |