BC856B RF, Bipolar Transistors - BJT -80V, -0.1A, PNP Bipolar Transistor
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- Код товара
- 8006375115
- Артикул
- BC856B RF
- Бренд
- Taiwan Semiconductor
- Brand:
- Taiwan Semiconductor
- Packaging:
- Reel, Cut Tape
- Вес, г
- 2
- Technology:
- Si
Цена по запросу
(от 12,99 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Taiwan Semiconductor |
| Packaging: | Reel, Cut Tape |
| Вес, г | 2 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | Taiwan Semiconductor |
| Package/Case: | SOT-23-3 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | BC856B |
| Product Category: | Bipolar Transistors-BJT |
| Структура | pnp |
| Transistor Polarity: | PNP |
| Factory Pack Quantity: | 3000 |
| Pd - Power Dissipation: | 200 mW |
| DC Current Gain hFE Max: | 475 |
| Gain Bandwidth Product fT: | 100 MHz |
| Emitter- Base Voltage VEBO: | 5 V |
| Collector- Base Voltage VCBO: | 80 V |
| Continuous Collector Current: | -100 mA |
| Maximum DC Collector Current: | 100 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hFE Min: | 220 |
| Collector- Emitter Voltage VCEO Max: | 65 V |
| Collector-Emitter Saturation Voltage: | 650 mV |
| Максимально допустимый ток к ( Iк макс.А) | 0.1 |