BC856B-7-F, Транзистор: PNP, биполярный, 65В, 0,1А, 350мВт, SOT23
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- Код товара
- 8017537687
- Артикул
- BC856B-7-F
- Бренд
- DIODES INC.
- ECCN
- EAR99
- PPAP
- No
- Type
- PNP
- Brand
- Diodes Incorporated
Цена по запросу
(от 24,77 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: PNP, биполярный, 65В, 0,1А, 350мВт, SOT23 Характеристики Категория Транзистор Тип биполярный Вид PNP
Технические параметры
| ECCN | EAR99 |
| PPAP | No |
| Type | PNP |
| Brand | Diodes Incorporated |
| HTSUS | 8541.21.0075 |
| Brand: | Diodes Incorporated |
| Series | BC856B |
| EU RoHS | Compliant |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® |
| Series: | BC856B |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.03 |
| PCB changed | 3 |
| Part Status | Active |
| Power - Max | 300mW |
| RoHS Status | ROHS3 Compliant |
| Subcategory | Transistors |
| Technology: | Si |
| Manufacturer | Diodes Incorporated |
| Package Type | SOT-23 |
| Product Type | BJTs-Bipolar Transistors |
| REACH Status | REACH Unaffected |
| Subcategory: | Transistors |
| Корпус | SOT-23(TO-236) |
| Configuration | Single |
| Manufacturer: | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Package/Case: | SOT-23-3 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Style: | SMD/SMT |
| Transistor Type | PNP |
| Product Category | Bipolar Small Signal |
| Supplier Package | SOT-23 |
| Product Category: | Bipolar Transistors-BJT |
| Структура | pnp |
| Base Product Number | BC856 -> |
| Transistor Polarity | PNP |
| Transistor Polarity: | PNP |
| Factory Pack Quantity | 3000 |
| Operating Temperature | -65В°C ~ 150В°C (TJ) |
| Standard Package Name | SOT-23 |
| Frequency - Transition | 200MHz |
| Pd - Power Dissipation | 300 mW |
| Minimum DC Current Gain | 220 2mA 5V |
| Pd - Power Dissipation: | 310 mW |
| Supplier Device Package | SOT-23-3 |
| Transistor Configuration | Single |
| Gain Bandwidth Product FT | 200 MHz |
| Maximum Power Dissipation | 300 mW |
| Emitter- Base Voltage VEBO | -5 V |
| Gain Bandwidth Product fT: | 200 MHz |
| Emitter- Base Voltage VEBO: | 5 V |
| Maximum Operating Frequency | 200 MHz |
| Number of Elements per Chip | 1 |
| Collector- Base Voltage VCBO | -80 V |
| Maximum DC Collector Current | -200 mA |
| Maximum Emitter Base Voltage | -5 V |
| Collector- Base Voltage VCBO: | 80 V |
| Maximum DC Collector Current: | 100 mA |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -65 C |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
| Current - Collector (Ic) (Max) | 100mA |
| DC Collector/Base Gain Hfe Min | 220 at-2 mA, -5 V |
| Maximum Collector Base Voltage | -80 V |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 350 |
| Minimum Operating Temperature: | -65 C |
| DC Collector/Base Gain hFE Min: | 220 at-2 mA, -5 V |
| Current - Collector Cutoff (Max) | 15nA |
| Maximum DC Collector Current (A) | 0.1 |
| Maximum Emitter Base Voltage (V) | 5 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Maximum Collector Emitter Voltage | -65 V |
| Maximum Collector Base Voltage (V) | 80 |
| Collector- Emitter Voltage VCEO Max | -65 V |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Collector- Emitter Voltage VCEO Max: | 65 V |
| Collector-Emitter Saturation Voltage | -650 mV |
| Operating Junction Temperature (°C) | -55 to 150 |
| Collector-Emitter Saturation Voltage: | 250 mV |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 220 @ 2mA, 5V |
| Maximum Collector-Emitter Voltage (V) | 65 |
| Maximum Collector Cut-Off Current (nA) | 15 |
| Maximum Base Emitter Saturation Voltage (V) | 1.1 5mA 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3 0.5mA 10mA|0.65 5mA 100mA |
| Максимальная рассеиваемая мощность ,Вт | 350мВт |
| Максимально допустимый ток к ( Iк макс.А) | 0.1 |
| Макс. напр. к-э при заданном токе к и разомкнутой цепи б.(Uкэо макс),В | 65 |