BC856AW-7-F,Bipolar (BJT) Single Transistor, PNP, 65 V, 100 mA, 200 mW, SOT-323, Surface Mount
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- Код товара
- 8046335498
- Артикул
- BC856AW-7-F
- Бренд
- DIODES INC.
- Brand:
- Diodes Incorporated
- Вес, г
- 0.001
- Technology:
- Si
- Subcategory:
- Transistors
Цена по запросу
(от 46 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Биполярные транзисторы PNP SOT-323-3 на 65 В 200 МВт, 125 В 2 мА, 5 В 100 мА - BJT ROHS
Технические параметры
| Brand: | Diodes Incorporated |
| Вес, г | 0.001 |
| Technology: | Si |
| Subcategory: | Transistors |
| Корпус | sot-323 |
| Manufacturer: | Diodes Incorporated |
| Package/Case: | SOT-323-3 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Transistor Type | PNP |
| Product Category: | Bipolar Transistors-BJT |
| Структура | pnp |
| Transistor Polarity: | PNP |
| Operating Temperature | -65℃~+150℃@(Tj) |
| Collector Current (Ic) | 100mA |
| Factory Pack Quantity: | 3000 |
| Power Dissipation (Pd) | 200mW |
| Pd - Power Dissipation: | 200 mW |
| DC Current Gain hFE Max: | 250 |
| Transition Frequency (fT) | 200MHz |
| Gain Bandwidth Product fT: | 200 MHz |
| Emitter- Base Voltage VEBO: | 5 V |
| DC Current Gain (hFE@Ic,Vce) | 125@2mA, 5V |
| Collector- Base Voltage VCBO: | 80 V |
| Maximum DC Collector Current: | 100 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -65 C |
| DC Collector/Base Gain hFE Min: | 125 |
| Collector Cut-Off Current (Icbo) | 15nA |
| Collector- Emitter Voltage VCEO Max: | 65 V |
| Collector-Emitter Saturation Voltage: | 250 mV |
| Collector-Emitter Breakdown Voltage (Vceo) | 65V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 250mV@100mA, 5mA |
| Максимально допустимый ток к ( Iк макс.А) | 100 mA |