BC856AS-7, 65V 200mW 180@2mA,5V 100mA 2PCSPNP SOT-363-6(SC-70-6) BIpolar TransIstors - BJT ROHS
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8070217054
- Артикул
- BC856AS-7
- Бренд
- DIODES INC.
- Brand:
- Diodes Incorporated
- Series:
- BC856A
- Вес, г
- 0.04
- Technology:
- Si
Цена по запросу
(от 31,94 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Diodes Incorporated |
| Series: | BC856A |
| Вес, г | 0.04 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | Diodes Incorporated |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-363-6 |
| Transistor Type | PNP |
| Product Category: | Bipolar Transistors-BJT |
| Структура | pnp |
| Transistor Polarity: | PNP |
| Collector Current (Ic) | 100mA |
| Power Dissipation (Pd) | 200mW |
| Pd - Power Dissipation: | 200 mW |
| DC Current Gain hFE Max: | 250 |
| Transition Frequency (fT) | 100MHz |
| Gain Bandwidth Product fT: | 100 MHz |
| Emitter- Base Voltage VEBO: | 5 V |
| DC Current Gain (hFE@Ic,Vce) | 125@2mA, 5V |
| Collector- Base Voltage VCBO: | 80 V |
| Maximum DC Collector Current: | 100 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -65 C |
| DC Collector/Base Gain hfe Min: | 125 |
| Collector Cut-Off Current (Icbo) | 15nA |
| Collector- Emitter Voltage VCEO Max: | 65 V |
| Collector-Emitter Saturation Voltage: | 250 mV |
| Collector-Emitter Breakdown Voltage (Vceo) | 65V |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 250mV@100mA, 5mA |