BC848CDW1T1G, Bipolar Transistors - BJT
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8059285587
- Артикул
- BC848CDW1T1G
- Бренд
- ON Semiconductor***
- Brand
- ON Semiconductor
- Width
- 1.25 mm
- Height
- 0.9 mm
- Length
- 2 mm
Цена по запросу
(от 23,56 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand | ON Semiconductor |
| Width | 1.25 mm |
| Height | 0.9 mm |
| Length | 2 mm |
| Series | BC848CDW1 |
| Packaging | Cut Tape or Reel |
| Вес, г | 0.01 |
| Subcategory | Transistors |
| Unit Weight | 0.000988 oz |
| Manufacturer | ON Semiconductor |
| Product Type | BJTs - Bipolar Transistors |
| Configuration | Dual |
| Mounting Style | SMD/SMT |
| Package / Case | SC-70-6 |
| Transistor Type | NPN |
| Product Category | Bipolar Transistors - BJT |
| Transistor Polarity | NPN |
| Factory Pack Quantity | 3000 |
| Collector Current (Ic) | 100mA |
| Pd - Power Dissipation | 380 mW |
| Power Dissipation (Pd) | 380mW |
| Gain Bandwidth Product FT | 100 MHz |
| Transition Frequency (fT) | 100MHz |
| Emitter- Base Voltage VEBO | 5 V |
| Collector- Base Voltage VCBO | 30 V |
| Continuous Collector Current | 0.1 A |
| DC Current Gain (hFE@Ic,Vce) | 420@2mA, 5V |
| Maximum DC Collector Current | 0.1 A |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |
| DC Collector/Base Gain Hfe Min | 420 |
| Collector Cut-Off Current (Icbo) | 15nA |
| Collector- Emitter Voltage VCEO Max | 30 V |
| Collector-Emitter Saturation Voltage | 0.6 V |
| Collector-Emitter Breakdown Voltage (Vceo) | 30V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 600mV@5mA, 100mA |