BC848BWT1G, Bipolar (BJT) Single Transistor, NPN, 30 V, 100 mA, 150 mW, SOT-323, Surface Mount
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8550365932
- Артикул
- BC848BWT1G
- Бренд
- ON Semiconductor***
- PPAP
- No
- Type
- NPN
- Brand:
- onsemi
- EU RoHS
- Compliant
Цена по запросу
(от 15 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Trans GP BJT NPN 30 В 0,1 А 200 МВт 3-контактный SC-70 T/R
Технические параметры
| PPAP | No |
| Type | NPN |
| Brand: | onsemi |
| EU RoHS | Compliant |
| Series: | BC848BW |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.006 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Subcategory: | Transistors |
| Корпус | sot-323 |
| Configuration | Single |
| Manufacturer: | onsemi |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SC-70-3 |
| Product Category | Bipolar Small Signal |
| Supplier Package | SC-70 |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity: | NPN |
| Standard Package Name | SOT-323 |
| Minimum DC Current Gain | 200 2mA 5V |
| Pd - Power Dissipation: | 200 mW |
| Gain Bandwidth Product fT: | 100 MHz |
| Emitter- Base Voltage VEBO: | 5 V |
| Number of Elements per Chip | 1 |
| Collector- Base Voltage VCBO: | 30 V |
| Continuous Collector Current: | 100 mA |
| Maximum DC Collector Current: | 100 mA |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 200 |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 150 |
| Maximum DC Collector Current (A) | 0.1 |
| Maximum Emitter Base Voltage (V) | 5 |
| Maximum Collector Base Voltage (V) | 30 |
| Maximum Transition Frequency (MHz) | 100(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Collector- Emitter Voltage VCEO Max: | 30 V |
| Operating Junction Temperature (°C) | -55 to 150 |
| Collector-Emitter Saturation Voltage: | 600 mV |
| Maximum Collector-Emitter Voltage (V) | 30 |
| Maximum Collector Cut-Off Current (nA) | 15 |
| Maximum Base Emitter Saturation Voltage (V) | 0.7(Typ)0.5mA 10mA|0.9(Typ)5mA 100mA |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.25 0.5mA 10mA|0.6 5mA 100mA |
| Максимально допустимый ток к ( Iк макс.А) | 100 mA |
| Макс. напр. к-э при заданном токе к и разомкнутой цепи б.(Uкэо макс),В | 30 |