BC847PNH6327XTSA1, Trans GP BJT NPN/PNP 45V 0.1A 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R
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- Код товара
- 8001490591
- Артикул
- BC847PNH6327XTSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- PPAP
- Unknown
- Type
- NPN|PNP
- Brand:
- Infineon Technologies
- EU RoHS
- Compliant
Цена по запросу
(от 55 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Trans GP BJT NPN/PNP 45V 0.1A 250 МВт Автомобильный 6-контактный разъем SOT-363 T/R
Технические параметры
| PPAP | Unknown |
| Type | NPN|PNP |
| Brand: | Infineon Technologies |
| EU RoHS | Compliant |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 6 |
| Part Status | LTB |
| Technology: | Si |
| Subcategory: | Transistors |
| Корпус | SOT-363 |
| Configuration | Dual |
| Manufacturer: | Infineon |
| Package Width | 1.25 |
| Package/Case: | SOT-363-6 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Dual |
| Package Length | 2 |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | BC 847PN H6327 SP000747288 |
| Product Category | Bipolar Small Signal |
| Supplier Package | SOT-363 |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity: | NPN, PNP |
| Standard Package Name | SOT |
| Factory Pack Quantity: | 3000 |
| Minimum DC Current Gain | 200@2mA@5V |
| Pd - Power Dissipation: | 250 mW |
| DC Current Gain hFE Max: | 450 |
| Gain Bandwidth Product fT: | 250 MHz |
| Supplier Temperature Grade | Automotive |
| Emitter- Base Voltage VEBO: | 6 V |
| Number of Elements per Chip | 2 |
| Collector- Base Voltage VCBO: | 50 V |
| Continuous Collector Current: | 100 mA |
| Maximum DC Collector Current: | 100 mA |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 250 |
| Minimum Operating Temperature: | -65 C |
| DC Collector/Base Gain hFE Min: | 200 |
| Maximum DC Collector Current (A) | 0.1 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Collector Base Voltage (V) | 50 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Collector- Emitter Voltage VCEO Max: | 45 V |
| Operating Junction Temperature (°C) | 150 |
| Collector-Emitter Saturation Voltage: | 200 mV |
| Maximum Collector-Emitter Voltage (V) | 45 |
| Maximum Collector Cut-Off Current (nA) | 15 |
| Maximum Base Emitter Saturation Voltage (V) | 0.9(Typ)@5mA@100mA|0.7(Typ)@0.5mA@10mA |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3@0.5mA@10mA|0.65@5mA@100mA |
| Максимально допустимый ток к ( Iк макс.А) | 0.1 |