BC847CW-7-F, Bipolar Transistors - BJT BIPOLAR TRANSISTOR NPN SOT-323
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8005058141
- Артикул
- BC847CW-7-F
- Бренд
- DIODES INC.
- PPAP
- No
- Type
- NPN
- Brand:
- Diodes Incorporated
- EU RoHS
- Compliant
Цена по запросу
(от 20 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: NPN, биполярный, 45В, 0,1А, 200мВт, SOT323 Характеристики Категория Транзистор Тип биполярный Вид NPN
Технические параметры
| PPAP | No |
| Type | NPN |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant |
| Series: | BC847C |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.01 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Subcategory: | Transistors |
| Корпус | sot-323 |
| Configuration | Single |
| Manufacturer: | Diodes Incorporated |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-323-3 |
| Transistor Type | NPN |
| Product Category | Bipolar Small Signal |
| Supplier Package | SOT-323 |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity: | NPN |
| Standard Package Name | SOT |
| Pd - Power Dissipation | 200mW |
| Minimum DC Current Gain | 420@2mA@5V |
| Pd - Power Dissipation: | 200 mW |
| Gain Bandwidth Product fT: | 100 MHz |
| Supplier Temperature Grade | Automotive |
| Emitter- Base Voltage VEBO: | 6 V |
| Number of Elements per Chip | 1 |
| Maximum DC Collector Current | 100mA |
| Collector- Base Voltage VCBO: | 50 V |
| Maximum DC Collector Current: | 100 mA |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 200 |
| Minimum Operating Temperature: | -65 C |
| DC Collector/Base Gain hfe Min: | 420 at 2 mA, 5 V |
| Maximum DC Collector Current (A) | 0.1 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Collector Base Voltage (V) | 50 |
| Collector-Emitter Breakdown Voltage | 45V |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -65 |
| Collector- Emitter Voltage VCEO Max: | 45 V |
| Operating Junction Temperature (°C) | -65 to 150 |
| Collector-Emitter Saturation Voltage: | 200 mV |
| Maximum Collector-Emitter Voltage (V) | 45 |
| Maximum Collector Cut-Off Current (nA) | 20 |
| Maximum Base Emitter Saturation Voltage (V) | 0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.25@0.5mA@10mA|0.6@5mA@100mA |