BC847CT-7-F, Транзистор: NPN, биполярный, 45В, 0,1А, 150мВт, SOT523
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- Код товара
- 8017538668
- Артикул
- BC847CT-7-F
- Бренд
- DIODES INC.
- PPAP
- No
- Type
- NPN
- Brand
- Diodes Incorporated
- Brand:
- Diodes Incorporated
Цена по запросу
(от 8,70 ₽)
Минимальный заказ: 10 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор: NPN, биполярный, 45В, 0,1А, 150мВт, SOT523 Характеристики Категория Транзистор Тип биполярный Вид NPN
Технические параметры
| PPAP | No |
| Type | NPN |
| Brand | Diodes Incorporated |
| Brand: | Diodes Incorporated |
| Series | BC847C |
| EU RoHS | Compliant |
| Series: | BC847C |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Cut Tape or Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.02 |
| PCB changed | 3 |
| Part Status | Active |
| Subcategory | Transistors |
| Technology: | Si |
| Manufacturer | Diodes Incorporated |
| Product Type | BJTs-Bipolar Transistors |
| Subcategory: | Transistors |
| Configuration | Single |
| Manufacturer: | Diodes Incorporated |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-523-3 |
| Mounting Style: | SMD/SMT |
| Package / Case: | SOT-523-3 |
| Product Category | Bipolar Transistors-BJT |
| Supplier Package | SOT-523 |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity | NPN |
| Transistor Polarity: | NPN |
| Factory Pack Quantity | 3000 |
| Standard Package Name | SOT |
| Pd - Power Dissipation | 150 mW |
| DC Current Gain HFE Max | 800 at 2 mA, 5 V |
| Minimum DC Current Gain | 420 2mA 5V |
| Pd - Power Dissipation: | 150 mW |
| DC Current Gain hFE Max: | 800 at 2 mA, 5 V |
| Gain Bandwidth Product FT | 100 MHz |
| Emitter- Base Voltage VEBO | 6 V |
| Gain Bandwidth Product fT: | 100 MHz |
| Supplier Temperature Grade | Automotive |
| Emitter- Base Voltage VEBO: | 6 V |
| Number of Elements per Chip | 1 |
| Collector- Base Voltage VCBO | 50 V |
| Continuous Collector Current | 0.1 A |
| Maximum DC Collector Current | 0.1 A |
| Collector- Base Voltage VCBO: | 50 V |
| Continuous Collector Current: | 100 mA |
| Maximum DC Collector Current: | 100 mA |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| DC Collector/Base Gain Hfe Min | 420 |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 150 |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 420 |
| Maximum DC Collector Current (A) | 0.1 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Collector Base Voltage (V) | 50 |
| Maximum Transition Frequency (MHz) | 100(Min) |
| Collector- Emitter Voltage VCEO Max | 45 V |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Collector- Emitter Voltage VCEO Max: | 45 V |
| Collector-Emitter Saturation Voltage | 600 mV |
| Collector-Emitter Saturation Voltage: | 600 mV |
| Maximum Collector-Emitter Voltage (V) | 45 |
| Maximum Collector Cut-Off Current (nA) | 15 |
| Maximum Base Emitter Saturation Voltage (V) | 0.7(Typ)0.5mA 10mA|0.9(Typ)5mA 100mA |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.6 5mA 100mA|0.25 0.5mA 10mA |
| Максимально допустимый ток к ( Iк макс.А) | 0.1 |
| Макс. напр. к-э при заданном токе к и разомкнутой цепи б.(Uкэо макс),В | 45 |