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BC847CDW1T1G, Транзистор биполярный,

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Код товара
8017529552
Артикул
BC847CDW1T1G
Бренд
ON Semiconductor***
Category
Bipolar Small Signal
Mounting
Surface Mount
Frequency
100(MHz)
Packaging
Tape and Reel
Цена по запросу
(от 12 ₽)
Минимальный заказ: 10 шт.

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Биполярный транзистор NPN/NPN, 45 В, 0.1 А, 0.38Вт

Технические параметры

CategoryBipolar Small Signal
MountingSurface Mount
Frequency100(MHz)
PackagingTape and Reel
Pin Count6
Вес, г0.04
Output PowerNot Required(W)
Package TypeSOT-363(SC-88)
Rad HardenedNo
КорпусSOT363-6
ConfigurationDual
Mounting TypeSurface Mount
DC Current Gain420
Frequency (Max)100 MHz
Transistor TypeNPN
Power Dissipation0.38(W)
Number of Elements2
Transistor PolarityNPN
Emitter-Base Voltage6(V)
Operating Temp Range-55C to 150C
DC Current Gain (Min)420
Collector Current (DC)0.1(A)
Collector Current (Ic)100mA
Collector-Base Voltage50(V)
Power Dissipation (Pd)380mW
Minimum DC Current Gain420
Transistor ConfigurationSingle
Collector-Emitter Voltage45(V)
Maximum Power Dissipation380 mW
Transition Frequency (fT)100MHz
Maximum Operating Frequency100 MHz
Number of Elements per Chip1
Collector Current (DC) (Max)0.1 A
DC Current Gain (hFE@Ic,Vce)420@2mA, 5V
Maximum DC Collector Current100 mA
Maximum Emitter Base Voltage6 V
Maximum Operating Temperature+150 °C
Maximum Collector Base Voltage50 V
кол-во в упаковке3000
Collector Cut-Off Current (Icbo)15nA
Maximum Collector Emitter Voltage45 V
Operating Temperature ClassificationMilitary
Collector-Emitter Breakdown Voltage (Vceo)45V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)600mV@100mA, 5mA

Техническая документация