BC847BWT1G, Транзистор биполярный,
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8017529551
- Артикул
- BC847BWT1G
- Бренд
- ON Semiconductor***
- HTS
- 8541.21.00.95
- Type
- NPN
- Brand
- ON Semiconductor
- Series
- BC847BW
Цена по запросу
(от 11,17 ₽)
Минимальный заказ: 5 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Биполярный транзистор, NPN, 45 В, 0.1 А
Технические параметры
| HTS | 8541.21.00.95 |
| Type | NPN |
| Brand | ON Semiconductor |
| Series | BC847BW |
| EU RoHS | Compliant |
| Material | Si |
| Military | No |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | Gull-wing |
| Вес, г | 0.02 |
| PCB changed | 3 |
| Part Status | Active |
| Power - Max | 150 mW |
| Subcategory | Transistors |
| Manufacturer | ON Semiconductor |
| Product Type | BJTs-Bipolar Transistors |
| Корпус | sot-323 |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Package Width | 1.24 |
| Mounting Style | SMD/SMT |
| Package / Case | SC-70-3 |
| Package Height | 0.85 |
| Package Length | 2.1 |
| Transistor Type | NPN |
| Product Category | Bipolar Small Signal |
| Supplier Package | SC-70 |
| Transistor Polarity | NPN |
| Factory Pack Quantity | 3000 |
| Operating Temperature | -55°C ~ 150°C(TJ) |
| Standard Package Name | SOT-323 |
| Collector Current (Ic) | 100mA |
| Frequency - Transition | 100MHz |
| Pd - Power Dissipation | 150 mW |
| Power Dissipation (Pd) | 150mW |
| Minimum DC Current Gain | 200@2mA@5V |
| Supplier Device Package | SC-70-3(SOT323) |
| Gain Bandwidth Product FT | 100 MHz |
| Transition Frequency (fT) | 100MHz |
| Emitter- Base Voltage VEBO | 6 V |
| Number of Elements per Chip | 1 |
| Collector- Base Voltage VCBO | 50 V |
| Continuous Collector Current | 0.1 A |
| DC Current Gain (hFE@Ic,Vce) | 200@2mA, 5V |
| Maximum DC Collector Current | 0.1 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector (Ic) (Max) | 100 mA |
| DC Collector/Base Gain Hfe Min | 150 |
| Maximum Power Dissipation (mW) | 200 |
| Collector Cut-Off Current (Icbo) | 15nA |
| Current - Collector Cutoff (Max) | 15nA(ICBO) |
| Maximum DC Collector Current (A) | 0.1 |
| Maximum Emitter Base Voltage (V) | 6 |
| Maximum Collector Base Voltage (V) | 50 |
| Maximum Transition Frequency (MHz) | 100(Min) |
| Collector- Emitter Voltage VCEO Max | 45 V |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Collector-Emitter Saturation Voltage | 0.6 V |
| Operating Junction Temperature (°C) | -55 to 150 |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
| Maximum Collector-Emitter Voltage (V) | 45 |
| Maximum Collector Cut-Off Current (nA) | 15 |
| Collector-Emitter Breakdown Voltage (Vceo) | 45V |
| Maximum Base Emitter Saturation Voltage (V) | 0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.6@5mA@100mA|0.25@0.5mA@10mA |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 600mV@100mA, 5mA |