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BC847BVN-7, Bipolar Transistors - BJT BIPOLAR COMP.

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Код товара
8005058136
Артикул
BC847BVN-7
Бренд
DIODES INC.
PPAP
No
Type
NPN|PNP
Brand:
Diodes Incorporated
EU RoHS
Compliant
Цена по запросу
(от 59,90 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Trans GP BJT NPN/PNP 45 В 0,1 А 150 МВт 6-контактный SOT-563 T/R

Технические параметры

PPAPNo
TypeNPN|PNP
Brand:Diodes Incorporated
EU RoHSCompliant
Series:BC847B
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeFlat
Вес, г0.01
PCB changed6
Part StatusActive
Technology:Si
Subcategory:Transistors
ConfigurationDual
Manufacturer:Diodes Incorporated
Product Type:BJTs-Bipolar Transistors
Configuration:Dual
Mounting Style:SMD/SMT
Package / Case:SOT-563-6
Product CategoryBipolar Small Signal
Supplier PackageSOT-563
Product Category:Bipolar Transistors-BJT
Transistor Polarity:NPN, PNP
Standard Package NameSOT
Minimum DC Current Gain200 2mA 5V NPN|220 2mA 5V PNP
Pd - Power Dissipation:150 mW
Gain Bandwidth Product fT:300 MHz
Supplier Temperature GradeAutomotive
Emitter- Base Voltage VEBO:6 V
Number of Elements per Chip2
Collector- Base Voltage VCBO:50 V
Maximum DC Collector Current:100 mA
Maximum Operating Temperature:+150 C
Maximum Power Dissipation (mW)150
Minimum Operating Temperature:-65 C
DC Collector/Base Gain hfe Min:200
Maximum DC Collector Current (A)0.1
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)50
Maximum Transition Frequency (MHz)300(Typ)NPN|200(Typ)PNP
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Collector- Emitter Voltage VCEO Max:45 V
Collector-Emitter Saturation Voltage:200 mV
Maximum Collector-Emitter Voltage (V)45
Maximum Collector Cut-Off Current (nA)15
Factory Pack Quantity: Factory Pack Quantity:3000

Техническая документация