BC847BVCQ-7, Bipolar Transistors - BJT General Purpose Transistor SOT563 T&R 3K
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8025005864
- Артикул
- BC847BVCQ-7
- Бренд
- DIODES INC.
- PPAP
- Yes
- Type
- NPN
- Mounting
- Surface Mount
- Packaging
- Tape and Reel
Цена по запросу
(от 300 ₽)
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
45 В 150 МВт 200 при 2 мА, 5 В 100 мА на 2 биполярныx транзистораx NPN SOT-563 - BJT ROHS
Технические параметры
| PPAP | Yes |
| Type | NPN |
| Mounting | Surface Mount |
| Packaging | Tape and Reel |
| Pin Count | 6 |
| Automotive | Yes |
| Lead Shape | Flat |
| Вес, г | 0.3 |
| PCB changed | 6 |
| Part Status | Active |
| Configuration | Dual |
| Package Width | 1.2 mm |
| Package Length | 1.6 mm |
| Transistor Type | 2 NPN |
| Product Category | Bipolar Small Signal |
| Supplier Package | SOT-563 |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Standard Package Name | SOT |
| Collector Current (Ic) | 100mA |
| Power Dissipation (Pd) | 150mW |
| Minimum DC Current Gain | 200@2mA@5V |
| Transition Frequency (fT) | 100MHz |
| Number of Elements per Chip | 2 |
| DC Current Gain (hFE@Ic,Vce) | 200@2mA, 5V |
| Maximum Power Dissipation (mW) | 150 |
| Collector Cut-Off Current (Icbo) | 15nA |
| Maximum Base-Emitter Voltage (V) | 6 |
| Maximum DC Collector Current (A) | 0.1 |
| Maximum Collector-Base Voltage (V) | 50 |
| Maximum Transition Frequency (MHz) | 100(Min) |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Collector-Emitter Voltage (V) | 45 |
| Collector-Emitter Breakdown Voltage (Vceo) | 45V |
| Maximum Base-Emitter Saturation Voltage (V) | 0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.1@0.5mA@10mA|0.3@5mA@100mA |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 300mV@5mA, 100mA |