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BC847BVC-7, Транзистор: NPN; биполярный

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Код товара
8017546599
Артикул
BC847BVC-7
Бренд
DIODES INC.
PPAP
No
Type
NPN
Brand:
Diodes Incorporated
EU RoHS
Compliant
Цена по запросу
(от 24,34 ₽)
Минимальный заказ: 5 шт.

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Trans GP BJT NPN 45V 0.1A 150 МВт 6-контактный SOT-563 T/R

Технические параметры

PPAPNo
TypeNPN
Brand:Diodes Incorporated
EU RoHSCompliant
Series:BC847B
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count6
AutomotiveNo
Lead ShapeFlat
Вес, г0.03
PCB changed6
Part StatusActive
Technology:Si
Subcategory:Transistors
ConfigurationDual
Manufacturer:Diodes Incorporated
Product Type:BJTs-Bipolar Transistors
Configuration:Dual
Mounting Style:SMD/SMT
Package / Case:SOT-563-6
Product CategoryBipolar Small Signal
Supplier PackageSOT-563
Product Category:Bipolar Transistors-BJT
Структураnpn
Transistor Polarity:NPN
Standard Package NameSOT-563
Minimum DC Current Gain200 2mA 5V
Pd - Power Dissipation:150 mW
Gain Bandwidth Product fT:100 MHz
Emitter- Base Voltage VEBO:6 V
Number of Elements per Chip2
Collector- Base Voltage VCBO:50 V
Maximum DC Collector Current:100 mA
Maximum Operating Temperature:+150 C
Maximum Power Dissipation (mW)150
Minimum Operating Temperature:-55 C
DC Collector/Base Gain hfe Min:200
Maximum DC Collector Current (A)0.1
Maximum Emitter Base Voltage (V)6
Maximum Collector Base Voltage (V)50
Maximum Transition Frequency (MHz)100(Min)
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-55
Collector- Emitter Voltage VCEO Max:45 V
Collector-Emitter Saturation Voltage:300 mV
Maximum Collector-Emitter Voltage (V)45
Maximum Base Emitter Saturation Voltage (V)0.7(Typ)0.5mA 10mA|0.9(Typ)5mA 100mA
Factory Pack Quantity: Factory Pack Quantity:3000
Maximum Collector-Emitter Saturation Voltage (V)0.1 0.5mA 10mA|0.3 5mA 100mA

Техническая документация