BC847BTT1G, Транзистор: NPN
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- Код товара
- 8017549952
- Артикул
- BC847BTT1G
- Бренд
- ON Semiconductor***
- Brand
- ON Semiconductor
- Series
- BC847ATT1
- Packaging
- Cut Tape or Reel
- Pin Count
- 3
Цена по запросу
(от 8,50 ₽)
Минимальный заказ: 20 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Биполярный транзистор, NPN, 45 В, 0.1 А, 0.2 Вт
Технические параметры
| Brand | ON Semiconductor |
| Series | BC847ATT1 |
| Packaging | Cut Tape or Reel |
| Pin Count | 3 |
| Вес, г | 0.03 |
| Power - Max | 225 mW |
| Subcategory | Transistors |
| Manufacturer | ON Semiconductor |
| Package Type | SOT-416(SC-75) |
| Product Type | BJTs-Bipolar Transistors |
| Корпус | SC-75 |
| Configuration | Single |
| Mounting Type | Surface Mount |
| Mounting Style | SMD/SMT |
| Package / Case | SC-75-3 |
| Transistor Type | NPN |
| Product Category | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity | NPN |
| Factory Pack Quantity | 3000 |
| Operating Temperature | -55°C ~ 150°C(TJ) |
| Frequency - Transition | 100MHz |
| Pd - Power Dissipation | 200 mW |
| Minimum DC Current Gain | 200 |
| Supplier Device Package | SC-75, SOT-416 |
| Transistor Configuration | Single |
| Gain Bandwidth Product FT | 100 MHz |
| Maximum Power Dissipation | 200 mW |
| Emitter- Base Voltage VEBO | 6 V |
| Maximum Operating Frequency | 100 MHz |
| Number of Elements per Chip | 1 |
| Collector- Base Voltage VCBO | 50 V |
| Continuous Collector Current | 0.1 A |
| Maximum DC Collector Current | 0.1 A |
| Maximum Emitter Base Voltage | 6 V |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 100mA |
| Current - Collector (Ic) (Max) | 100 mA |
| DC Collector/Base Gain Hfe Min | 200 |
| Maximum Collector Base Voltage | 50 V |
| Current - Collector Cutoff (Max) | 15nA(ICBO) |
| Maximum Collector Emitter Voltage | 45 V |
| Collector- Emitter Voltage VCEO Max | 45 V |
| Collector-Emitter Saturation Voltage | 0.6 V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |