BC847BPN,165
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8034993859
- Бренд
- NXP Semiconductor
- Brand:
- Nexperia
- Вес, г
- 1
- Technology:
- Si
- Subcategory:
- Transistors
Цена по запросу
(от 15 ₽)
Минимальный заказ: 190 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Технические параметры
| Brand: | Nexperia |
| Вес, г | 1 |
| Technology: | Si |
| Subcategory: | Transistors |
| Manufacturer: | Nexperia |
| Package/Case: | TSSOP-6 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Dual |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | 934042530165 |
| Transistor Type | NPN+PNP |
| Product Category: | Bipolar Transistors-BJT |
| Transistor Polarity: | NPN, PNP |
| Collector Current (Ic) | 100mA |
| Factory Pack Quantity: | 10000 |
| Power Dissipation (Pd) | 300mW |
| Pd - Power Dissipation: | 300 mW |
| DC Current Gain hFE Max: | 200 at 2 mA, 5 V |
| Transition Frequency (fT) | 100MHz |
| Gain Bandwidth Product fT: | 100 MHz |
| Emitter- Base Voltage VEBO: | 5 V |
| DC Current Gain (hFE@Ic,Vce) | 200@2mA, 5V |
| Collector- Base Voltage VCBO: | 50 V |
| Maximum DC Collector Current: | 100 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -65 C |
| DC Collector/Base Gain hFE Min: | 200 at 2 mA, 5 V |
| Collector Cut-Off Current (Icbo) | 15nA |
| Collector- Emitter Voltage VCEO Max: | 45 V |
| Collector-Emitter Saturation Voltage: | 300 mV |
| Collector-Emitter Breakdown Voltage (Vceo) | 45V |
| Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) | 300mV@100mA, 5mA |