BC847BLP-7, Trans GP BJT NPN 45V 0.1A 1000mW 3-Pin X1-DFN T/R
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8001035201
- Артикул
- BC847BLP-7
- Бренд
- DIODES INC.
- PPAP
- No
- Type
- NPN
- Brand:
- Diodes Incorporated
- EU RoHS
- Compliant
Цена по запросу
(от 17 ₽)
Минимальный заказ: 3000 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Trans GP BJT NPN 45V 0.1A 250 МВт 3-контактный X1-DFN T/R
Технические параметры
| PPAP | No |
| Type | NPN |
| Brand: | Diodes Incorporated |
| EU RoHS | Compliant |
| Series: | BC847B |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tape and Reel |
| Pin Count | 3 |
| Automotive | No |
| Lead Shape | No Lead |
| Вес, г | 1 |
| PCB changed | 3 |
| Part Status | Active |
| Technology: | Si |
| Subcategory: | Transistors |
| Configuration | Single |
| Manufacturer: | Diodes Incorporated |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Mounting Style: | SMD/SMT |
| Package / Case: | DFN1006-3 |
| Product Category | Bipolar Small Signal |
| Supplier Package | X1-DFN |
| Power Dissipation | 1Вт |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity: | NPN |
| Standard Package Name | DFN |
| DC Current Gain hFE Min | 200hFE |
| Minimum DC Current Gain | 200 2mA 5V |
| Pd - Power Dissipation: | 400 mW |
| Квалификация | - |
| Gain Bandwidth Product fT: | 100 MHz |
| Emitter- Base Voltage VEBO: | 6 V |
| Number of Elements per Chip | 1 |
| Continuous Collector Current | 100мА |
| Collector Emitter Voltage Max | 45В |
| Collector- Base Voltage VCBO: | 50 V |
| Maximum DC Collector Current: | 100 mA |
| Maximum Operating Temperature: | +150 C |
| Maximum Power Dissipation (mW) | 1000 |
| Minimum Operating Temperature: | -55 C |
| DC Collector/Base Gain hfe Min: | 200 |
| DC Усиление Тока hFE | 200hFE |
| Maximum DC Collector Current (A) | 0.1 |
| Maximum Emitter Base Voltage (V) | 6 |
| Линейка Продукции | BC847 Series |
| Maximum Collector Base Voltage (V) | 50 |
| Maximum Transition Frequency (MHz) | 100(Min) |
| Частота Перехода ft | 100МГц |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Количество Выводов | 3вывод(-ов) |
| Монтаж транзистора | Surface Mount |
| Collector- Emitter Voltage VCEO Max: | 45 V |
| Collector-Emitter Saturation Voltage: | 200 mV |
| Maximum Collector-Emitter Voltage (V) | 45 |
| Maximum Base Emitter Saturation Voltage (V) | 0.7(Typ)0.5mA 10mA|0.9(Typ)5mA 100mA |
| Полярность Транзистора | NPN |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.25 0.5mA 10mA|0.6 5mA 100mA |
| Стиль Корпуса Транзистора | X1-DFN1006 |
| Максимальная Рабочая Температура | 150°C |
| Максимально допустимый ток к ( Iк макс.А) | 0.1 |