BC817UPNE6327HTSA1, Trans GP BJT NPN/PNP 45V 0.5A 330mW 6-Pin SC-74 T/R Automotive AEC-Q101
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- Код товара
- 8001328335
- Артикул
- BC817UPNE6327HTSA1
- Бренд
- INFINEON TECHNOLOGIES AG.
- I(C)
- 0.5 A
- RoHS
- Details
- Brand
- Infineon Technologies
- Width
- 1.6 mm
Цена по запросу
(от 26 ₽)
Минимальный заказ: 2627 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Infineon BC817UPNE6327HTSA1 На двойном NPN + PNP транзисторе, 500 мА, 45 В, 6-контактный SC-74
Технические параметры
| I(C) | 0.5 A |
| RoHS | Details |
| Brand | Infineon Technologies |
| Width | 1.6 mm |
| Brand: | Infineon Technologies |
| Height | 1 mm |
| Length | 2.9 mm |
| P(tot) | 0.33 W |
| Series | BC 817UPN |
| V(CBO) | 50 V |
| V(CEO) | 45 V |
| Package | PG-SC74-6 |
| Packaging | Reel |
| Automotive | AEC-Q(101) |
| Вес, г | 0.01 |
| Part Status | Last Time Buy |
| Power - Max | 330mW |
| RoHS Status | RoHS-conform |
| Technology: | Si |
| Current gain | 250 |
| Manufacturer | Infineon |
| Polarisation | NPN/PNP |
| Subcategory: | Transistors |
| Configuration | Dual |
| Manufacturer: | Infineon |
| Mounting Type | Surface Mount |
| Package/Case: | SC-74-6 |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Dual |
| Mounting Style | SMD/SMT |
| Package / Case | SC-74-6 |
| Part # Aliases | BC817UPNE6327HTSA1 BC817UPNE6327XT SP000012398 |
| Qualification: | AEC-Q101 |
| Mounting Style: | SMD/SMT |
| Part # Aliases: | BC 817UPN E6327 SP000012398 |
| Transistor Type | NPN, PNP |
| Base Part Number | BC817 |
| Product Category | Bipolar Transistors-BJT |
| Product Category: | Bipolar Transistors-BJT |
| Структура | npn |
| Transistor Polarity | NPN |
| Transistor Polarity: | NPN |
| Factory Pack Quantity | 12000 |
| Operating Temperature | 150В°C(TJ) |
| Factory Pack Quantity: | 3000 |
| Frequency - Transition | 170MHz |
| Pd - Power Dissipation | 330 mW |
| DC Current Gain hFE Max | 400 |
| Pd - Power Dissipation: | 330 mW |
| Supplier Device Package | PG-SC74-6 |
| DC Current Gain hFE Max: | 400 |
| Gain Bandwidth Product fT | 170 MHz |
| Emitter- Base Voltage VEBO | 5 V |
| Gain Bandwidth Product fT: | 170 MHz |
| Emitter- Base Voltage VEBO: | 5 V |
| Collector- Base Voltage VCBO | 50 V |
| Continuous Collector Current | 500 mA |
| Maximum DC Collector Current | 1000 mA |
| Collector- Base Voltage VCBO: | 50 V |
| Continuous Collector Current: | 500 mA |
| Maximum DC Collector Current: | 500 mA |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -65 C |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
| Current - Collector (Ic) (Max) | 500mA |
| DC Collector/Base Gain hfe Min | 160 |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -65 C |
| DC Collector/Base Gain hFE Min: | 160 |
| Current - Collector Cutoff (Max) | 100nA(ICBO) |
| Collector- Emitter Voltage VCEO Max | 45 V |
| Collector- Emitter Voltage VCEO Max: | 45 V |
| Collector-Emitter Saturation Voltage | 0.7 V |
| Collector-Emitter Saturation Voltage: | 700 mV |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 100mA, 1V |
| Voltage - Collector Emitter Breakdown (Max) | 45V |
| Максимально допустимый ток к ( Iк макс.А) | 0.5 |