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BC817-25W-7, Bipolar Transistors - BJT NPN SURFACE MOUNT SMALL SIGNAL TRANS

BC817-25W-7, Bipolar Transistors - BJT NPN SURFACE MOUNT SMALL SIGNAL TRANS

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Код товара
8005058115
Артикул
BC817-25W-7
Бренд
DIODES INC.
HTS
8541.21.00.75
Type
NPN
Brand
Diodes Incorporated
Brand:
Diodes Incorporated
Цена по запросу
(от 41 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Технические параметры

HTS8541.21.00.75
TypeNPN
BrandDiodes Incorporated
Brand:Diodes Incorporated
SeriesBC817
EU RoHSCompliant
Series:BC817
MilitaryNo
MountingSurface Mount
ECCN (US)EAR99
PackagingTape and Reel
Pin Count3
AutomotiveNo
Lead ShapeGull-wing
Вес, г0.01
PCB changed3
Part StatusActive
SubcategoryTransistors
Technology:Si
ManufacturerDiodes Incorporated
Product TypeBJTs-Bipolar Transistors
Subcategory:Transistors
ConfigurationSingle
Manufacturer:Diodes Incorporated
Package Width1.3
Product Type:BJTs-Bipolar Transistors
Configuration:Single
Mounting StyleSMD/SMT
Package / CaseSOT-323-3
Package Height0.95
Package Length2.15
Mounting Style:SMD/SMT
Package / Case:SOT-323-3
Product CategoryBipolar Small Signal
Supplier PackageSOT-323
Product Category:Bipolar Transistors-BJT
Структураnpn
Transistor PolarityNPN
Transistor Polarity:NPN
Factory Pack Quantity3000
Standard Package NameSOT
Pd - Power Dissipation200 mW
Minimum DC Current Gain100@300mA@1V|160@100mA@1V
Pd - Power Dissipation:200 mW
Gain Bandwidth Product FT100 MHz
Emitter- Base Voltage VEBO5 V
Gain Bandwidth Product fT:100 MHz
Emitter- Base Voltage VEBO:5 V
Number of Elements per Chip1
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current1 A
Collector- Base Voltage VCBO:50 V
Maximum DC Collector Current:500 mA
Maximum Operating Temperature+150 C
Minimum Operating Temperature-65 C
DC Collector/Base Gain Hfe Min160
Maximum Operating Temperature:+150 C
Maximum Power Dissipation (mW)200
Minimum Operating Temperature:-65 C
DC Collector/Base Gain hfe Min:160
Maximum DC Collector Current (A)0.5
Maximum Emitter Base Voltage (V)5
Maximum Collector Base Voltage (V)50
Maximum Transition Frequency (MHz)100(Min)
Collector- Emitter Voltage VCEO Max45 V
Maximum Operating Temperature (°C)150
Minimum Operating Temperature (°C)-65
Collector- Emitter Voltage VCEO Max:45 V
Collector-Emitter Saturation Voltage0.7 V
Collector-Emitter Saturation Voltage:700 mV
Maximum Collector-Emitter Voltage (V)45
Factory Pack Quantity: Factory Pack Quantity:3000
Maximum Collector-Emitter Saturation Voltage (V)0.7@50mA@500mA

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