BC32740TA PNP Transistor, -800 mA, -45 V, 3-Pin TO-92
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8010794280
- Артикул
- BC32740TA
- Бренд
- ON Semiconductor***
- Brand:
- onsemi/Fairchild
- Category
- Bipolar Small Signal
- Mounting
- Through Hole
- Frequency
- 100(MHz)
Цена по запросу
(от 41,31 ₽)
Минимальный заказ: 10 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Широкий ассортимент транзисторов с биполярным переxодом (BJT) обеспечивает комплексные решения для различныx применений в сxемотеxнике.
Технические параметры
| Brand: | onsemi/Fairchild |
| Category | Bipolar Small Signal |
| Mounting | Through Hole |
| Frequency | 100(MHz) |
| Packaging | FAN-FOLD |
| Pin Count | 3 |
| Packaging: | Ammo Pack |
| Вес, г | 0.24 |
| Power - Max | 625 mW |
| Technology: | Si |
| Output Power | Not Required(W) |
| Package Type | TO-92 |
| Rad Hardened | No |
| Subcategory: | Transistors |
| Корпус | TO-92 |
| Configuration | Single |
| Manufacturer: | onsemi |
| Mounting Type | Through Hole |
| Package/Case: | TO-92-3 Kinked Lead |
| Product Type: | BJTs-Bipolar Transistors |
| Configuration: | Single |
| Package / Case | TO-226-3, TO-92-3(TO-226AA)Formed Leads |
| DC Current Gain | 250 |
| Mounting Style: | Through Hole |
| Part # Aliases: | BC32740TA_NL |
| Transistor Type | PNP |
| Power Dissipation | 0.625(W) |
| Product Category: | Bipolar Transistors-BJT |
| Number of Elements | 1 |
| Структура | pnp |
| Transistor Polarity | PNP |
| Emitter-Base Voltage | 5(V) |
| Operating Temp Range | -55C to 150C |
| Transistor Polarity: | PNP |
| Operating Temperature | 150°C(TJ) |
| Collector Current (DC) | 0.8(A) |
| Factory Pack Quantity: | 2000 |
| Frequency - Transition | 100MHz |
| Pd - Power Dissipation: | 625 mW |
| Supplier Device Package | TO-92-3 |
| DC Current Gain hFE Max: | 630 |
| Transistor Configuration | Single |
| Maximum Power Dissipation | 625 mW |
| Gain Bandwidth Product fT: | 100 MHz |
| Emitter- Base Voltage VEBO: | 5 V |
| Maximum Operating Frequency | 100 MHz |
| Number of Elements per Chip | 1 |
| Maximum DC Collector Current | -800 mA |
| Maximum Emitter Base Voltage | 5 V |
| Continuous Collector Current: | -800 mA |
| Maximum DC Collector Current: | 800 mA |
| Maximum Operating Temperature | +150 °C |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 50mA, 500mA |
| Current - Collector (Ic) (Max) | 800 mA |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Current - Collector Cutoff (Max) | 100nA |
| Maximum Collector Emitter Voltage | -45 V |
| Collector- Emitter Voltage VCEO Max: | 45 V |
| Operating Temperature Classification | Military |
| Collector-Emitter Saturation Voltage: | 700 mV |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 100mA, 1V |
| Voltage - Collector Emitter Breakdown (Max) | 45 V |