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BC107 PBFREE, Bipolar Transistors - BJT NPN 50Vcbo 45Vceo 6.0Vebo 200mA 600Pd

BC107 PBFREE, Bipolar Transistors - BJT NPN 50Vcbo 45Vceo 6.0Vebo 200mA 600Pd

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Код товара
8062573050
Артикул
BC107 PBFREE
Бренд
Central Semiconductor Corp
ECCN
EAR99
HTSUS
8541.21.0075
Brand:
Central Semiconductor
Package
Bulk
Цена по запросу
(от 269,15 ₽)

Стоимость и сроки поставки подтвердит менеджер после заявки.

Описание

Биполярный (BJT) транзистор NPN 45 В 200 мА 150 МГц 600 МВт Со сквозным отверстием TO-18

Технические параметры

ECCNEAR99
HTSUS8541.21.0075
Brand:Central Semiconductor
PackageBulk
Packaging:Bulk
Вес, г1.31
Power - Max600mW
RoHS StatusROHS3 Compliant
REACH StatusREACH Unaffected
Subcategory:Transistors
Manufacturer:Central Semiconductor
Mounting TypeThrough Hole
Product Type:BJTs-Bipolar Transistors
Configuration:Single
Package / CaseTO-206AA, TO-18-3 Metal Can
Mounting Style:Through Hole
Package / Case:TO-18-3
Transistor TypeNPN
Product Category:Bipolar Transistors-BJT
Структураnpn
Transistor Polarity:NPN
Operating Temperature-65В°C ~ 200В°C (TJ)
Frequency - Transition150MHz
Pd - Power Dissipation:600 mW
Supplier Device PackageTO-18
DC Current Gain hFE Max:450
Gain Bandwidth Product fT:150 MHz
Emitter- Base Voltage VEBO:6 V
Collector- Base Voltage VCBO:50 V
Continuous Collector Current:200 mA
Maximum DC Collector Current:200 mA
Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
Current - Collector (Ic) (Max)200mA
Maximum Operating Temperature:+200 C
Minimum Operating Temperature:-65 C
DC Collector/Base Gain hfe Min:110
Current - Collector Cutoff (Max)15nA (ICBO)
Moisture Sensitivity Level (MSL)1 (Unlimited)
Collector- Emitter Voltage VCEO Max:45 V
Collector-Emitter Saturation Voltage:600 mV
DC Current Gain (hFE) (Min) @ Ic, Vce110 @ 2mA, 5V
Voltage - Collector Emitter Breakdown (Max)45V
Factory Pack Quantity: Factory Pack Quantity:2000