AUIRFR5305, Trans MOSFET P-CH Si 55V 31A 3-Pin(2+Tab) DPAK Tube Automotive AEC-Q101
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8002239095
- Артикул
- AUIRFR5305
- Бренд
- INFINEON TECHNOLOGIES AG.
- Tab
- Tab
- PPAP
- Unknown
- EU RoHS
- Compliant with Exemption
- Material
- Si
Цена по запросу
(от 408 ₽)
Минимальный заказ: 187 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Описание Транзистор P-МОП, полевой, HEXFET, -55В, -31А, 110Вт, DPAK Характеристики Категория Транзистор Тип полевой Вид MOSFET
Технические параметры
| Tab | Tab |
| PPAP | Unknown |
| EU RoHS | Compliant with Exemption |
| Material | Si |
| Mounting | Surface Mount |
| ECCN (US) | EAR99 |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | Yes |
| Вес, г | 1 |
| PCB changed | 2 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| Product Category | Power MOSFET |
| Supplier Package | DPAK |
| Maximum IDSS (uA) | 25 |
| Process Technology | HEXFET |
| Структура | MOSFET |
| Transistor Polarity | P Channel; Continuous Drain Current Id |
| Standard Package Name | TO-252 |
| Typical Fall Time (ns) | 63 |
| Typical Rise Time (ns) | 66 |
| Особенности | автомобильные приложения |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Maximum Power Dissipation (mW) | 110000 |
| Typical Gate Charge @ 10V (nC) | 63(Max) |
| Typical Gate Charge @ Vgs (nC) | 63(Max)@10V |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Output Capacitance (pF) | 520 |
| Typical Turn-On Delay Time (ns) | 14 |
| Maximum Drain Source Voltage (V) | 55 |
| Typical Gate Plateau Voltage (V) | 6.6 |
| Typical Turn-Off Delay Time (ns) | 39 |
| Maximum Diode Forward Voltage (V) | 1.3 |
| Typical Gate to Drain Charge (nC) | 29(Max) |
| Maximum Gate Threshold Voltage (V) | 4 |
| Minimum Gate Threshold Voltage (V) | 2 |
| Typical Gate to Source Charge (nC) | 13(Max) |
| Typical Reverse Recovery Time (ns) | 71 |
| Maximum Operating Temperature (°C) | 175 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 31 |
| Operating Junction Temperature (°C) | -55 to 175 |
| Typical Input Capacitance @ Vds (pF) | 1200@25V |
| Typical Reverse Recovery Charge (nC) | 170 |
| Maximum Drain Source Resistance (mOhm) | 65@10V |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 110 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 250@25V |
| Крутизна характеристики, S | 8 |
| Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 50 |
| Пороговое напряжение на затворе | -2…-4 В |
| Максимальное напряжение сток-исток Uси,В | 55 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 31 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |