AUIRF4905S, Trans MOSFET P-CH Si 55V 70A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK Tube
Изображения служат только для ознакомления, см. техническую документацию
- Код товара
- 8048070351
- Артикул
- AUIRF4905S
- Бренд
- International Rectifier
- Tab
- Tab
- PPAP
- Unknown
- SVHC
- Yes
- Material
- Si
Цена по запросу
(от 930 ₽)
Минимальный заказ: 95 шт.
Стоимость и сроки поставки подтвердит менеджер после заявки.
Описание
Транзистор MOSFET P-CH Si 55V 70A 3-контактный (2 + вкладки) D2PAK Tube Автомобильный AEC-Q101
Технические параметры
| Tab | Tab |
| PPAP | Unknown |
| SVHC | Yes |
| Material | Si |
| Military | No |
| Mounting | Surface Mount |
| Packaging | Tube |
| Pin Count | 3 |
| Automotive | Yes |
| Lead Shape | Gull-wing |
| Вес, г | 1 |
| PCB changed | 2 |
| Part Status | Obsolete |
| Channel Mode | Enhancement |
| Channel Type | P |
| Configuration | Single |
| Package Width | 9.65(Max)mm |
| Package Length | 10.67(Max)mm |
| Product Category | Power MOSFET |
| Supplier Package | D2PAK |
| Maximum IDSS (uA) | 25 |
| Process Technology | HEXFET |
| Структура | MOSFET |
| AEC Qualified Number | AEC-Q101 |
| Standard Package Name | TO |
| SVHC Exceeds Threshold | Yes |
| Typical Fall Time (ns) | 64 |
| Typical Rise Time (ns) | 99 |
| Особенности | автомобильные приложения |
| Supplier Temperature Grade | Automotive |
| Number of Elements per Chip | 1 |
| Operating Temperature - (??C) | -55~150 |
| Maximum Power Dissipation (mW) | 170000 |
| Typical Gate Charge @ 10V (nC) | 120 |
| Typical Gate Charge @ Vgs (nC) | 120@10V |
| Maximum Gate-Source Voltage (V) | ±20 |
| Typical Turn-On Delay Time (ns) | 20 |
| Maximum Drain-Source Voltage (V) | 55 |
| Maximum Power Dissipation - (mW) | 170000 |
| Typical Gate Charge @ 10V - (nC) | 120 |
| Typical Gate Charge @ Vgs - (nC) | 120@10V |
| Typical Turn-Off Delay Time (ns) | 51 |
| Maximum Gate Source Voltage - (V) | ??20 |
| Maximum Drain Source Voltage - (V) | 55 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum Operating Temperature (°C) | 150 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Continuous Drain Current (A) | 70 |
| Maximum Gate Threshold Voltage - (V) | 4 |
| Typical Input Capacitance @ Vds (pF) | 3500@25V |
| Maximum Continuous Drain Current - (A) | 70 |
| Maximum Drain-Source Resistance (mOhm) | 20@10V |
| Typical Input Capacitance @ Vds - (pF) | 3500@25V |
| Maximum Drain Source Resistance - (mOhm) | 20@10V |
| Maximum Gate-Source Leakage Current (nA) | 100 |
| Пороговое напряжение на затворе | 2…4 В |
| Максимальное напряжение сток-исток Uси,В | 55 |
| Максимальный ток сток-исток при 25 С Iси макс..А | 70 |
| Максимальная рассеиваемая мощность Pси макс..Вт | 170 |
| Максимальное напряжение затвор-исток Uзи макс.,В | ±20В |